Chapter 2

Write the most likely charge for the ions formed by each elcment: (a) F; (b) Ba; (c) Se; (d) O.

Predict the number of valence clectrons present for cach of the following ions: (a) \(\mathrm{Sb}^{3+}\); (b) \(\mathrm{Rh}^{+}\); (c) \(\mathrm{Co}^{2+}\); (d) \(\mathrm{Ru}^{3+}\).

lodine can exist in both positive and negative oxidation states. What is the maximum (a) positive and (b) negative oxidation number that iodine may have? (c) Determine the clectron configurations for each of these states. (d) Explain how you arrived at these values.

\(2.21\) What is the ground-state clectron configuration expected for each of the folluwing ions: (a) \(B i^{34}\); (b) \(\mathrm{Sn}^{4+} ;\) (c) \(\mathrm{P}^{3-} ;\) (d) \(\mathrm{Br}^{-} ;\)(e) \(\mathrm{Ni}^{2+}\) ?

Give the ground-state electron configuration predicred for each of the following ions: (a) \(\ln ^{+}\); (b) \(\mathrm{Cu}^{+} ;\)(c) \(\mathrm{Pb}^{2+} ;\) (d) \(\mathrm{Se}^{2-}\).

\( For each of the following ground-state ions, predict the type of orbital \)(1 s, 2 p, 3 d, 4 f\(, and so on) in which the clectrons of highest energy will reside: (a) \)\mathrm{Ti}^{3+}\(; (b) \)\ln ^{4}\( (c) \)\mathrm{Te}^{2-}\(; (d) \)\mathrm{Ag}^{+}$.

For each of the following ground-state ions, predict the type of orbital \((1 s, 2 p, 3 d, 4 f\), and so on) in which the electrons of highest energy will reside: (a) \(\mathrm{Fe}^{2+}\); (b) \(\mathrm{Bi}^{3+}\); (c) \(\mathrm{As}^{3+}\); (d) \(\mathrm{Os}^{+}\).

On the basis of the expected charges on the monatomic ions, give the chemical formula of each of the following compounds: (a) magnesium arsenide; (b) indium sulfide; (c) aluminum hydride; (d) hydrogen telluride; (c) bismuth(III) fluoride.

On the basis of the expected charges on the monatomic ions, give the chemical formula of each of the following compounds: (a) sodium sulfide;(b) lithium nitride; (c) calcium chloride; (d) gallium arsenide; (c) cobalt(III) oxide.

On the basis of the expected charges on the monatomic ions, give the chemical formula of each of the following compounds: (a) gallium arsenide; (b) magnesium oxide; (c) ahuminum telluride; (d) ruthenium(IV) oxide; (c) vanadium(V) oxide.