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Chapter 12: Problem 71

For each of the following pairs of semiconductors, which one will have the larger band gap: (a) CdS or CdTe, (b) GaN or InP, ( c) GaAs or InAs?

Short Answer

Expert verified
In summary, the semiconductors with larger band gaps are: (a) CdS (b) GaN (c) GaAs

Step by step solution

01

CdS or CdTe

To determine which semiconductor has a larger band gap, we can look at the element composition of each. - CdS consists of cadmium (Cd) and sulfur (S). - CdTe consists of cadmium (Cd) and tellurium (Te). Sulfur (S) is higher in the periodic table than tellurium (Te), which means that the electronegativity difference between cadmium and sulfur is larger compared to that of cadmium and tellurium. A larger electronegativity difference leads to a stronger ionic bond and thus a larger band gap. So, in this case, CdS has a larger band gap than CdTe.
02

GaN or InP

Comparing the composition of each semiconductor: - GaN consists of gallium (Ga) and nitrogen (N). - InP consists of indium (In) and phosphorus (P). To compare the band gaps, we can consider that nitrogen (N) is more electronegative than phosphorus (P) and gallium (Ga) is more electronegative than indium (In). As a result, the electronegativity difference between Ga and N is larger than that of In and P, which leads to a stronger ionic bond and a larger band gap for GaN. Thus, GaN has a larger band gap than InP.
03

GaAs or InAs

Examining the composition of each semiconductor: - GaAs consists of gallium (Ga) and arsenic (As). - InAs consists of indium (In) and arsenic (As). In this case, both semiconductors contain arsenic (As). Gallium (Ga) is more electronegative than indium (In). As a result, GaAs has a larger electronegativity difference between its constituent elements, which leads to a stronger ionic bond and a larger band gap. Therefore, GaAs has a larger band gap than InAs. In summary, the semiconductors with larger band gaps are: (a) CdS (b) GaN (c) GaAs

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