For each of the following pairs of semiconductors, which one will have the larger band gap: (a) CdS or CdTe, (b) GaN or InP, (c) GaAs or InAs?

Short Answer

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For each pair of semiconductors, the one with the larger band gap is: (a) CdS, with a band gap of 2.42 eV, (b) GaN, with a band gap of 3.4 eV, and (c) GaAs, with a band gap of 1.43 eV.

Step by step solution

01

Find the Band Gaps

Look up the band gap values for each of the given semiconductors in a reference book or reliable online source. (a) CdS: The band gap is 2.42 eV. CdTe: The band gap is 1.44 eV. (b) GaN: The band gap is 3.4 eV. InP: The band gap is 1.35 eV. (c) GaAs: The band gap is 1.43 eV. InAs: The band gap is 0.36 eV.
02

Compare the Band Gaps

Compare the band gaps of each pair to determine which semiconductor has a larger band gap. (a) CdS vs CdTe: CdS has a band gap of 2.42 eV, while CdTe has a band gap of 1.44 eV. Since 2.42 eV > 1.44 eV, CdS has a larger band gap. (b) GaN vs InP: GaN has a band gap of 3.4 eV, while InP has a band gap of 1.35 eV. Since 3.4 eV > 1.35 eV, GaN has a larger band gap. (c) GaAs vs InAs: GaAs has a band gap of 1.43 eV, while InAs has a band gap of 0.36 eV. Since 1.43 eV > 0.36 eV, GaAs has a larger band gap.
03

Write the Results

After comparing the band gaps, note down which semiconductor has a larger band gap for each pair. (a) In the pair of CdS and CdTe, the semiconductor with the larger band gap is CdS. (b) In the pair of GaN and InP, the semiconductor with the larger band gap is GaN. (c) In the pair of GaAs and InAs, the semiconductor with the larger band gap is GaAs.

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