Log out Go to App
Go to App

Learning Materials

Features

Discover

Chapter 12: Problem 74

If you want to dope GaAs to make a p-type semiconductor with an element to replace As, which element(s) would you pick?

Short Answer

Expert verified
To dope GaAs and create a p-type semiconductor, we can use elements from group 14 of the periodic table to replace Arsenic (As). Suitable candidates include Germanium (Ge) and Silicon (Si). However, Germanium is preferred over Silicon due to its similar lattice size, resulting in better crystal quality when incorporated into GaAs.

Step by step solution

01

Understand p-type semiconductors

A p-type semiconductor is a type of semiconductor that has been doped with elements that create an excess of positive charge carriers (holes). This is achieved by introducing impurity elements that have one less electron in their outer shells than the semiconductor material they are replacing.
02

Identify the positions of Gallium and Arsenic in the Periodic Table

Gallium (Ga) belongs to group 13 and period 4, whereas Arsenic (As) belongs to group 15 and period 4 in the periodic table. Since Arsenic is the element that will be replaced, we need to find an element that has the ability to produce the p-type semiconductor effect when replacing As in GaAs.
03

Find the appropriate element to create a p-type semiconductor

To create a p-type semiconductor, we need to find an element that has one less electron in its outer shell compared to Arsenic. Finding an element in group 14 (right next to group 15) and within the same period or close to the period will help in achieving the desired effect. In this case, Germanium (Ge) is found within group 14 and is in period 4. This makes it a suitable candidate for replacing As in GaAs. Another element that could be used is Silicon (Si) which also belongs to group 14 and period 3. However, it is important to note that the lattice mismatch between GaAs and Si is larger, which may affect the crystal quality of the resulting material.
04

Conclusion

When doping GaAs to create a p-type semiconductor, Germanium (Ge) or Silicon (Si) can be used to replace Arsenic (As) as an appropriate dopant. Germanium is preferred due to its similar lattice size, which can lead to better crystal quality when incorporated into GaAs.

Unlock Step-by-Step Solutions & Ace Your Exams!

  • Full Textbook Solutions

    Get detailed explanations and key concepts

  • Unlimited Al creation

    Al flashcards, explanations, exams and more...

  • Ads-free access

    To over 500 millions flashcards

  • Money-back guarantee

    We refund you if you fail your exam.

Start your free trial

Over 30 million students worldwide already upgrade their learning with Vaia!

One App. One Place for Learning.

All the tools & learning materials you need for study success - in one app.

Get started for free

Most popular questions from this chapter

When you shine light of band gap energy or higher on a semiconductor and promote electrons from the valence band to the conduction band, do you expect the conductivity of the semiconductor to (a) remain unchanged, (b) increase, or (c) decrease?

For each of these solids, state whether you would expect it to possess metallic properties: (a) \(\mathrm{TiCl}_{4}\) (b) NiCo alloy, (c) W, (d) Ge, (e) ScN.

Indicate whether each statement is true or false: (a) Intermetallic compounds have a fixed composition. (b) Copper is the majority component in both brass and bronze. (c) In stainless steel, the chromium atoms occupy interstitial positions.

Potassium metal (atomic weight \(39.10 \mathrm{~g} / \mathrm{mol}\) ) adopts a body-centered cubic structure with a density of $0.856 \mathrm{~g} / \mathrm{cm}^{3}\(. (a) Use this information and Avogadro's number \)(6.022 \times\( \)10^{23}$ ) to estimate the atomic radius of potassium. (b) If potassium didn't react so vigorously, it could float on water. Use the answer from part (a) to estimate the density of \(\mathrm{K}\) if its structure were that of a cubic close-packed metal. Would it still float on water?

Covalent bonding occurs in both molecular and covalentnetwork solids. Which of the following statements best explains why these two kinds of solids differ so greatly in their hardness and melting points? (a) The molecules in molecular solids have stronger covalent bonding than covalent-network solids do. (b) The molecules in molecular solids are held together by weak intermolecular interactions. (c) The atoms in covalent-network solids are more polarizable than those in molecular solids. (d) Molecular solids are denser than covalent-network solids.
See all solutions

Recommended explanations on Chemistry Textbooks

Making Measurements

Read Explanation

Inorganic Chemistry

Read Explanation

Organic Chemistry

Read Explanation

Chemistry Branches

Read Explanation

Ionic and Molecular Compounds

Read Explanation

The Earths Atmosphere

Read Explanation
View all explanations

What do you think about this solution?

We value your feedback to improve our textbook solutions.

Study anywhere. Anytime. Across all devices.

Sign-up for free