Chapter 19: Problem 2563
Strong overlapping of different atomic orbital's makes (A) different energy level (B) energy band (C) Conductor (D) Insulators
Chapter 19: Problem 2563
Strong overlapping of different atomic orbital's makes (A) different energy level (B) energy band (C) Conductor (D) Insulators
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Get started for freeBy adding impurity in intrinsic semiconductor \(\mathrm{P}\) type semiconductor is made. charge of these P type semiconductor is (A) trivalent, neutral (B) pentavalent, neutral (C) pentavalent, positive (D) trivalent, negative
The intrinsic semi-conductor has : (A) a finite resistance which does not change with temperature (B) infinite resistance which decreases with temperature (C) Finite resistance which decreases with temperature (D) Finite resistance which does not change with temperature
A n-p-n transistor is used in common emitter made in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~mA}\( and \)0.04 \mathrm{~V}$ in input voltage. If a load of \(6 \mathrm{k} \Omega\) is used, then the voltage gain of the amplifier is (A) 100 (B) 200 (C) 300 (D) 400
A n-p-n transistor circuit has \(\alpha=0.985 .\) If $\mathrm{I}_{\mathrm{c}}=9 \mathrm{~mA}\( then the value of \)\mathrm{I}_{\mathrm{b}}$ is (A) \(0.003 \mathrm{~mA}\) (B) \(0.66 \mathrm{~mA}\) (C) \(0.015 \mathrm{~mA}\) (D) \(0.13 \mathrm{~mA}\)
The value of depletion capacitance on decreasing the reverse bias on varactor diode (A) decreases (B) increases (C) becomes zero (D) does not change
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