Chapter 19: Problem 2563
Strong overlapping of different atomic orbital's makes (A) different energy level (B) energy band (C) Conductor (D) Insulators
Chapter 19: Problem 2563
Strong overlapping of different atomic orbital's makes (A) different energy level (B) energy band (C) Conductor (D) Insulators
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Get started for freeIonization energy of isolated phosphorous atom \(10 \mathrm{eV}\). Ionization energy of same atom in Si is nearly \(\mathrm{eV}\) (Relative Permittivity of silicon \(=12\) ) (A) \(0.1\) (B) \(0.2\) (C) \(0.3\) (D) \(0.4\)
Reverse bias applied on a junction diode: (A) raises the potential barrier (B) increases majority charge carrier current (C) lowers the potential barrier (D) increases the temperature of junction
When NPN transistor is used as an amplifier then (A) electron moves from base to collector (B) hole travels from emitter to base (C) hole goes to emitter from base (D) electron goes to base from collector
A N-P-N transistor conducts when collector is and emitter is with respect to base. (A) positive, negative (B) positive, positive (C) negative, negative (D) negative, positive
From the following semi-conductor devices, operates in forward bias only. (A) Varactar diode (B) Zenger diode (C) Light emitting diode (D) photo-diode
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