Chapter 19: Problem 2567
The behavior of Ge as semi-conductor is due to width of: (A) Conduction band being large (B) Forbidden band being large (C) Conduction band being small (D) Forbidden band being small and narrow
Chapter 19: Problem 2567
The behavior of Ge as semi-conductor is due to width of: (A) Conduction band being large (B) Forbidden band being large (C) Conduction band being small (D) Forbidden band being small and narrow
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The device associated with voltage controlled capacitance is (A) Light emitting diode (B) Photo diode (C) Varactor diode (D) Zener diode
Direction for Assertion - Reason type questions (A) If both Assertion and Reason are true and reason is the correct explanation of assertion. (B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion. (C) If Assertion is true but Reason is false (D) If both assertion and reason are false A: The ionization energy of isolated phosphorous is very large \(\mathrm{R}\) : The ionization energy of phosphorous in lattice is very small (A) a (B) \(b\) (C) \(\mathrm{c}\) (D) \(\mathrm{d}\)
To obtain OR gate from NOR gate, you will need (A) one NOR gate (B) one NOT gate (C) Two NOR gate (D) one OR gate
How many NAND gates are used to form AND gate? (A) 1 (B) 2 (C) 3 (D) 4
The depletion layer in PN junction diode is caused by (A) drift of holes (B) Diffusion of impurity ions (C) diffusion of charge carriers (D) drift of electrons
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