Chapter 19: Problem 2582
Digital circuits can be made to be respective use of: (A) AND gate (B) OR gate (C) NOT gate (D) NAND gate
Chapter 19: Problem 2582
Digital circuits can be made to be respective use of: (A) AND gate (B) OR gate (C) NOT gate (D) NAND gate
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Get started for freeWhen NPN transistor is used as an amplifier then (A) electron moves from base to collector (B) hole travels from emitter to base (C) hole goes to emitter from base (D) electron goes to base from collector
For a transistor amplifier, the voltage gain (A) remains constant for all frequencies (B) is high at high and low frequencies and constant in the mid-frequency range (C) is low at high and low frequencies and constant in the mid-frequency range (D) None of the above
A zener diode used as voltage regulator is connected (i) in forward bias (ii) in reverse bias (iii) in parallel with load (iv) in series with load (A) (i) and (ii) are correct (B) (ii) and (iii) are correct (C) only (i) is correct (D) only (iv) is correct
The forbidden energy band gap in semi-conductor, conductor and insulator are
\(E_{1}, E_{2}\) and \(E_{3}\) respectively. The relation among then is:
(A) \(E_{1}
The depletion layer in PN junction diode is caused by (A) drift of holes (B) Diffusion of impurity ions (C) diffusion of charge carriers (D) drift of electrons
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