Chapter 19: Problem 2590
How many NAND gates are used to form AND gate? (A) 1 (B) 2 (C) 3 (D) 4
Chapter 19: Problem 2590
How many NAND gates are used to form AND gate? (A) 1 (B) 2 (C) 3 (D) 4
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Get started for freeTo obtain OR gate from NOR gate, you will need (A) one NOR gate (B) one NOT gate (C) Two NOR gate (D) one OR gate
The depletion layer in PN junction diode is caused by (A) drift of holes (B) Diffusion of impurity ions (C) diffusion of charge carriers (D) drift of electrons
Direction for Assertion - Reason type questions (A) If both Assertion and Reason are true and reason is the correct explanation of assertion. (B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion. (C) If Assertion is true but Reason is false (D) If both assertion and reason are false A : A transistor amplifier circuit in common emitter configuration has low input impedance \(\mathrm{R}\) : Base-emitter junction is forward biased (A) (B) (C) (D)
A n-p-n transistor circuit has \(\alpha=0.985 .\) If $\mathrm{I}_{\mathrm{c}}=9 \mathrm{~mA}\( then the value of \)\mathrm{I}_{\mathrm{b}}$ is (A) \(0.003 \mathrm{~mA}\) (B) \(0.66 \mathrm{~mA}\) (C) \(0.015 \mathrm{~mA}\) (D) \(0.13 \mathrm{~mA}\)
A light emitting diode has a voltage drop of \(2 \mathrm{~V}\) across it when \(10 \mathrm{~mA}\) current is passed. If this \(\mathrm{LED}\) is to be operated with \(6 \mathrm{~V}\) battery the value of limiting resistor would be (A) \(400 \Omega\) (B) \(4000 \Omega\) (C) \(40 \mathrm{k} \Omega\) (D) \(300 \Omega\)
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