Chapter 19: Problem 2595
The active junction area in a solar cell is as we want power (A) small, more (B) small, small (C) large, more (D) large, small
Chapter 19: Problem 2595
The active junction area in a solar cell is as we want power (A) small, more (B) small, small (C) large, more (D) large, small
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Get started for freeThe depletion layer in PN junction diode is caused by (A) drift of holes (B) Diffusion of impurity ions (C) diffusion of charge carriers (D) drift of electrons
For \(\mathrm{p}-\mathrm{n}\) junction, which statement is incorrect (A) Donor atoms are depleted of their holes in junction (B) No net charge exists far from junction (C) Barrier potential \(\mathrm{V}_{\mathrm{B}}\) is generated (D) Energy \(\mathrm{V}_{\mathrm{B}}\) is to be surmounted before any charge can flow across junction
When a P-type semi-conductor is heated: (A) number of holes increases while that of electrons decreases (B) number of electron increases while that of hole decreases (C) number of electrons and holes remains same (D) number of electrons and holes increases equally
The number of holes and electrons in an intrinsic conductors are \(\mathrm{x}\)
and \(\mathrm{y}\) respectively at room temperature. Which of the following
options are true?
(A) \(x>y\)
(B) \(\mathrm{y}>\mathrm{x}\)
(C) \(x=y\)
(D) \(x<
A P-N photodiode is made of a material with a band gap of 2.0ev. The minimum frequency of the radiation that can be absorbed by the material is nearly (Take hc \(=1240 \mathrm{eVnm}\) ) (A) \(5 \times 10^{14} \mathrm{~Hz}\) (B) \(20 \times 10^{14} \mathrm{~Hz}\) (C) \(1 \times 10^{14} \mathrm{~Hz}\) (D) \(10 \times 10^{14} \mathrm{~Hz}\)
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