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Chapter 19: Problem 2603

In Ge sample, traces of gallium are added as impurity. The resultant sample would behave like: (A) a conductor (B) a P-type semiconductor (C) an N-type semiconductor (D) an insulator

Short Answer

Expert verified
The correct answer is (B) a P-type semiconductor, as adding Gallium (a trivalent impurity) to Germanium creates a P-type semiconductor.

Step by step solution

01

Understanding impurities and their effect on semiconductors

An impurity, also known as dopant, is any foreign material added to a pure semiconductor substance to alter its conductive properties. A small amount of impurity can significantly change the conductive properties of the semiconductor. Impurities can be either trivalent (three valence electrons) or pentavalent (five valence electrons). The addition of a trivalent impurity to a semiconductor results in a P-type semiconductor, and a pentavalent impurity results in an N-type semiconductor.
02

Identify the valency of Gallium and Germanium

To determine the type of semiconductor formed when adding Gallium (Ga) to Germanium (Ge), we must identify their valence electrons. Gallium, having the electron configuration [Ar] 3d^10 4s^2 4p^1, has three valence electrons in its outermost shell. Germanium, having the electron configuration [Ar] 3d^10 4s^2 4p^2, has four valence electrons in its outermost shell.
03

Determine the type of semiconductor

As Gallium has three valence electrons (trivalent), adding it as an impurity to Germanium will create a P-type semiconductor. The extra positive holes caused by Gallium's missing fourth valence electron provide charge carriers for conductivity.
04

Choose the correct answer

From the given options: (A) a conductor (B) a P-type semiconductor (C) an N-type semiconductor (D) an insulator The correct answer is (B) a P-type semiconductor, as adding Gallium (trivalent impurity) to Germanium creates a P-type semiconductor.

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Most popular questions from this chapter

Semi-conductor has phosphorus as impurity then it will have (A) \(\mathrm{n}_{\mathrm{e}}>\mathrm{n}_{\mathrm{h}}\) (B) \(\mathrm{n}_{\mathrm{e}}<<\mathrm{n}_{\mathrm{h}}\) (C) \(\mathrm{n}_{\mathrm{e}}=\mathrm{n}_{\mathrm{h}}\) (D) \(n_{e}=n_{h}=n_{i}\)

We can not make \(\mathrm{p}-\mathrm{n}\) junction diode by making \(\mathrm{P}\) type semi-conductor join with N-type semi-conductor, because (A) Inter-atomic spacing becomes less than \(1 \mathrm{~A}^{\circ}\) (B) P-type will repel N-type (C) There will be discontinuity for the flowing charge carriers (D) semi-conducting properties will be lost

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