Chapter 19: Problem 2638
The manifestation of band structure in solids is due to: (A) Heisenberg's uncertainty principle (B) Pauli's exclusion principle (C) Bohr's correspondence principle (D) Boltzmann's low
Chapter 19: Problem 2638
The manifestation of band structure in solids is due to: (A) Heisenberg's uncertainty principle (B) Pauli's exclusion principle (C) Bohr's correspondence principle (D) Boltzmann's low
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For normal operation of the transistor, the collector diode has to be (A) Forward biased (B) Reverse biased (C) Non conducting (D) Operating in breakdown region
The A.C. current gain of a transistor is 100 . If the base current changes by \(100 \mu \mathrm{A}\), What is the charge in collector current? (A) \(20 \mathrm{~mA}\) (B) \(30 \mathrm{~mA}\) (C) \(10 \mathrm{~mA}\) (D) \(10 \mu \mathrm{A}\)
In VLSI circuits more than gates are contained. (A) 1000 (B) 100 (C) 10 (D) 500
The ratio of concentration of electrons and holes in a semi-conductor is $(7 / 5)\( and the ratio of currents is \)(7 / 4)$, then what is the ratio of their drift velocities? (A) \((4 / 5)\) (B) \((5 / 6)\) (C) \((4 / 5)\) (D) \((5 / 4)\)
The current flowing through \(10 \Omega\) resistor in the circuit shown in the figure is (A) \(50 \mathrm{~mA}\) (B) \(20 \mathrm{~mA}\) (C) \(40 \mathrm{~mA}\) (D) \(80 \mathrm{~mA}\)
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