Chapter 19: Problem 2648
The flow of valence electrons to the left means that holes are flowing. (A) Left (B) Right (C) Either way (D) None
Chapter 19: Problem 2648
The flow of valence electrons to the left means that holes are flowing. (A) Left (B) Right (C) Either way (D) None
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Get started for freeDirection for Assertion - Reason type questions (A) If both Assertion and Reason are true and reason is the correct explanation of assertion. (B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion. (C) If Assertion is true but Reason is false (D) If both assertion and reason are false A: The ionization energy of isolated phosphorous is very large \(\mathrm{R}\) : The ionization energy of phosphorous in lattice is very small (A) a (B) \(b\) (C) \(\mathrm{c}\) (D) \(\mathrm{d}\)
Ionization energy of isolated phosphorous atom \(10 \mathrm{eV}\). Ionization energy of same atom in Si is nearly \(\mathrm{eV}\) (Relative Permittivity of silicon \(=12\) ) (A) \(0.1\) (B) \(0.2\) (C) \(0.3\) (D) \(0.4\)
We can not make \(\mathrm{p}-\mathrm{n}\) junction diode by making \(\mathrm{P}\) type semi-conductor join with N-type semi-conductor, because (A) Inter-atomic spacing becomes less than \(1 \mathrm{~A}^{\circ}\) (B) P-type will repel N-type (C) There will be discontinuity for the flowing charge carriers (D) semi-conducting properties will be lost
The depletion layer in PN junction diode is caused by (A) drift of holes (B) Diffusion of impurity ions (C) diffusion of charge carriers (D) drift of electrons
To obtain OR gate from NOR gate, you will need (A) one NOR gate (B) one NOT gate (C) Two NOR gate (D) one OR gate
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