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Chapter 38: Problem 2908

A P-N junction is said to be forward based when (A) a magnetic field is applied in the region of junction. (B) a potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions making \(\mathrm{P}\) region negative and \(\mathrm{N}\) region positive. (C) not potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions. (D) a potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions making P region positive and N region negative.

Short Answer

Expert verified
A forward-based P-N junction is when the P region is connected to the positive terminal and the N region is connected to the negative terminal of a voltage source. Based on the given options, the correct answer is (D) a potential difference is applied across P and N regions making P region positive and N region negative.

Step by step solution

01

Option A: Magnetic field applied in the region of the junction

This option is not relevant to a forward-based P-N junction, as applying a magnetic field does not necessarily make a P-N junction forward-based. Therefore, option A is incorrect.
02

Option B: Potential difference making P region negative and N region positive

This option describes a situation where the P-N junction is reverse-biased, as the P region becomes negative and the N region becomes positive. A forward-based P-N junction requires the opposite situation where P region is positive and the N region is negative. Therefore, option B is incorrect.
03

Option C: No potential difference applied across P and N regions

When there is no potential difference applied across the P and N regions, the P-N junction will be unbiased. For a P-N junction to be forward-based, there must be a potential difference applied, making the P region positive and the N region negative. Therefore, option C is incorrect.
04

Option D: Potential difference making P region positive and N region negative

This option correctly describes a forward-based P-N junction. When a potential difference is applied across the P and N regions such that the P region is positive and the N region is negative, the P-N junction will be in forward bias. Therefore, option D is the correct answer.

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Most popular questions from this chapter

In a semiconductor diode, barrier potential offers opposition to only (A) free electrons in \(\mathrm{N}\) region (B) holes in the P region (C) minority carriers in both regions (D) majority carriers in both regions.

The number of minority carriers crossing the junction of diode depends primarily on the (A) magnitude of potential barrier (B) magnitude of the forward bias barrier. (C) rate of thermal generation of electron hole pair. (D) concentration of doping impurities.

The reverse biasing in junction diode (A) increase the potential barrier (B) increases the number of minority change carriers (C) increases the number of majority change carriers (D) decreases the potential diode

When \(\mathrm{P}-\mathrm{N}\) junction diode is forward based, then (A) Both the depletion region and barrier height are reduced. (B) Both depletion region and barrier height are increased. (C) The deflection region is winded and barrier height is reduced. (D) The depletion region is reduced and barrier height is increased.

In a P-N junction, there is no appreciable current if (A) a potential difference is applied across the junction (B) it is impossible (C) P-section is a made positive and N-section negative (D) a potential difference is applied across junction making P section negative and N-section positive.
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