The reverse biasing in junction diode (A) increase the potential barrier (B) increases the number of minority change carriers (C) increases the number of majority change carriers (D) decreases the potential diode

A junction diode is a semiconductor device with a pn-junction, where the p-side contains majority holes and the n-side contains majority electrons. The thin region between the p-side and n-side is called the depletion region, and it comprises positively and negatively charged ions due to the diffusion of charge carriers. The potential difference across the depletion region is known as the potential barrier.

When the positive terminal of the external voltage (battery or power source) is connected to the n-side and the negative terminal is connected to the p-side, it is called reverse biasing. The applied voltage opposes the potential barrier, which increases the width of the depletion region and reduces the flow of charge carriers across the junction.

(A) Increase the potential barrier - During reverse biasing, the applied voltage increases the width of the depletion region, which increases the potential barrier. (B) Increases the number of minority charge carriers - In reverse biasing, minority charge carriers (holes in the n-side and electrons in the p-side) experience an attraction towards the externally applied voltage and this results in an increase in their number. (C) Increases the number of majority charge carriers - This statement is incorrect because the number of majority charge carriers (holes in the p-side and electrons in the n-side) does not increase during reverse biasing; in fact, it almost remains constant. (D) Decreases the potential diode - This statement is unclear and seems to be incorrect, as the potential barrier increases during reverse biasing.

Based on our analysis, the correct option is: (A) increase the potential barrier