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Chapter 38: Problem 2916

In a semiconductor diode, barrier potential offers opposition to only (A) free electrons in \(\mathrm{N}\) region (B) holes in the P region (C) minority carriers in both regions (D) majority carriers in both regions.

Short Answer

Expert verified
The barrier potential in a semiconductor diode offers opposition to majority carriers in both regions (electrons in the N-type region and holes in the P-type region). Therefore, the correct answer is (D) majority carriers in both regions.

Step by step solution

01

Understand Semiconductor Diode Structure and Operation

A semiconductor diode is a two-terminal electronic device formed by joining a P-type semiconductor and an N-type semiconductor. In the P-type region, majority carriers are holes, and in the N-type region, majority carriers are electrons. When these regions are combined to form the diode, charge exchange occurs near the junction, resulting in the creation of a depletion region. This depletion region creates a barrier potential that opposes the motion of charge carriers.
02

Effect of Barrier Potential on Majority Carriers

Since the barrier potential is formed due to the majority carriers in the P-type and N-type regions, it opposes their flow through the junction. The barrier potential prevents the continuous exchange of majority carriers (holes and electrons) between the P-type and N-type regions, which would lead to the recombination of majority carriers across the junction.
03

Effect of Barrier Potential on Minority Carriers

Minority carriers are the opposite charge carriers in each region, namely electrons in the P region and holes in the N region. When a forward voltage is applied to the diode, the barrier potential decreases and allows majority carriers to flow across the junction, but the minority carriers are not the reason for the barrier potential creation and hence remain unaffected.
04

Answer the question

From the analysis above, we can conclude that the correct answer is (D) majority carriers in both regions. Barrier potential in a semiconductor diode primarily opposes the flow of majority carriers, electrons in the N-type region, and holes in the P-type region.

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Most popular questions from this chapter

When \(\mathrm{P}-\mathrm{N}\) junction diode is forward based, then (A) Both the depletion region and barrier height are reduced. (B) Both depletion region and barrier height are increased. (C) The deflection region is winded and barrier height is reduced. (D) The depletion region is reduced and barrier height is increased.

The electrical resistance of depletion layer is large because (A) it contains electrons as charge carriers (B) it has holes as charge carriers. (C) it has no charge carriers. (D) It has large number of charge carriers

When P-N junction diode is in forward biased condition, the flow of current is mainly due to (A) both by drift and diffusion of electrons (B) the drift of electrons (C) the diffusion of electrons (D) none of the a above

A P-N junction is said to be forward based when (A) a magnetic field is applied in the region of junction. (B) a potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions making \(\mathrm{P}\) region negative and \(\mathrm{N}\) region positive. (C) not potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions. (D) a potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions making P region positive and N region negative.

The number of minority carriers crossing the junction of diode depends primarily on the (A) magnitude of potential barrier (B) magnitude of the forward bias barrier. (C) rate of thermal generation of electron hole pair. (D) concentration of doping impurities.
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