Each atom in a chunk of copper contributes one conduction electron. Look up the density and atomic mass of copper, and calculate the Fermi energy, the Fermi temperature, the degeneracy pressure, and the contribution of the degeneracy pressure to the bulk modulus. Is room temperature sufficiently low to treat this system as a degenerate electron gas?

Short Answer

Expert verified

The Fermi energy is 7.04eV, Fermi temperature 81884K, degeneracy pressure is 3.74Pascal.and the bulk modulus is 6.3×105atm.

The found temperature is to large from the room temperature.

Step by step solution

01

Given information

We have given,

Every atom in a chunk of copper is contributes one conduction electron.

We have to find the Fermi energy, Fermi temperature and pressure.

02

Simplify

Formula of the Fermi energy is given by,

εf=h28m3NπV23

Where, V is volume of the chunk, which is given by,

V=Mρ

Where we know that the one mole of mass of copper is 63.5gand density of the copper is 8.93g/cm3.

Then volume will be,

V=63.5g8.93g/cm3V=7.1cm3V=7.1×10-6m3

Since it is given that the every atom is give the one electron. then, number of electron for per unit volume will be equal to number of atom in one mole.

Then,

N=6.022×1023electron/mole

Mass of the electron =9.1×10-31kg

Then, the Fermi energy will be,

εf=h28m3NπV23εf=(6.63×10-34J.s)28(9.1×10-31kg)3(6.022×1023π×7.1×10-6εf=7.04eV

Then, the Fermi temperature will be found out by,

εf=KBT

Where KBis Boltzmann's constant.

then,

localid="1649951480186" εf=(1.38×10-23J/K)TT=1.13×10-18J1.38×10-23J/KT=81884K

03

simplify

The degeneracy pressure can be found as

P=2N5VεfP=2×6.022×10235×7.1×10-6m3(1.13×10-18J)P=3.74pascal

The contribution of the degeneracy pressure to the bulk modulus is given by,

B=2N3VεfB=2×6.022×10233×7.1×10-6m3×1.13×10-18JB=6.3×105atm

The found temperature is very large than the room temperature that is why it is sufficiently low to treat this system as a degenerate electron gas.

Unlock Step-by-Step Solutions & Ace Your Exams!

  • Full Textbook Solutions

    Get detailed explanations and key concepts

  • Unlimited Al creation

    Al flashcards, explanations, exams and more...

  • Ads-free access

    To over 500 millions flashcards

  • Money-back guarantee

    We refund you if you fail your exam.

Over 30 million students worldwide already upgrade their learning with Vaia!

One App. One Place for Learning.

All the tools & learning materials you need for study success - in one app.

Get started for free

Most popular questions from this chapter

Consider the electromagnetic radiation inside a kiln, with a volume of V= I m3 and a temperature of 1500 K.

(a) What is the total energy of this radiation?

(b) Sketch the spectrum of the radiation as a function of photon energy.

(c) What fraction of all the energy is in the visible portion of the spectrum, with wavelengths between 400 nm and 700 nm?

Evaluate the integrand in equation 7.112as a power series in x, keeping terms through x4• Then carry out the integral to find a more accurate expression for the energy in the high-temperature limit. Differentiate this expression to obtain the heat capacity, and use the result to estimate the percent deviation of Cvfrom3NkatT=TDandT=2TD.

Consider an isolated system of Nidentical fermions, inside a container where the allowed energy levels are nondegenerate and evenly spaced.* For instance, the fermions could be trapped in a one-dimensional harmonic oscillator potential. For simplicity, neglect the fact that fermions can have multiple spin orientations (or assume that they are all forced to have the same spin orientation). Then each energy level is either occupied or unoccupied, and any allowed system state can be represented by a column of dots, with a filled dot representing an occupied level and a hollow dot representing an unoccupied level. The lowest-energy system state has all levels below a certain point occupied, and all levels above that point unoccupied. Let ηbe the spacing between energy levels, and let be the number of energy units (each of size 11) in excess of the ground-state energy. Assume thatq<N. Figure 7 .8 shows all system states up to q=3.

(a) Draw dot diagrams, as in the figure, for all allowed system states with q=4,q=5,andq=6. (b) According to the fundamental assumption, all allowed system states with a given value of q are equally probable. Compute the probability of each energy level being occupied, for q=6. Draw a graph of this probability as a function of the energy of the level. ( c) In the thermodynamic limit where qis large, the probability of a level being occupied should be given by the Fermi-Dirac distribution. Even though 6 is not a large number, estimate the values of μand T that you would have to plug into the Fermi-Dirac distribution to best fit the graph you drew in part (b).

A representation of the system states of a fermionic sytern with evenly spaced, nondegen erate energy levels. A filled dot rep- resents an occupied single-particle state, while a hollow dot represents an unoccupied single-particle state . {d) Calculate the entropy of this system for each value of q from 0to6, and draw a graph of entropy vs. energy. Make a rough estimate of the slope of this graph near q=6, to obtain another estimate of the temperature of this system at that point. Check that it is in rough agreement with your answer to part ( c).

In a real semiconductor, the density of states at the bottom of the conduction band will differ from the model used in the previous problem by a numerical factor, which can be small or large depending on the material. Let us, therefore, write for the conduction band g(ϵ)=g0cϵ-ϵcwhere g0cis a new normalization constant that differs from g0by some fudge factor. Similarly, write gat the top of the valence band in terms of a new normalization constant g0v.

(a) Explain why, if g0vg0c, the chemical potential will now vary with temperature. When will it increase, and when will it decrease?

(b) Write down an expression for the number of conduction electrons, in terms of T,μ,candg0cSimplify this expression as much as possible, assuming ϵc-μkT.

(c) An empty state in the valence band is called a hole. In analogy to part (b), write down an expression for the number of holes, and simplify it in the limit μ-ϵvkT.

(d) Combine the results of parts (b) and (c) to find an expression for the chemical potential as a function of temperature.

(e) For silicon, g0cg0=1.09andg0vg0=0.44*.Calculate the shift inµ for silicon at room temperature.

The speed of sound in copper is 3560m/s. Use this value to calculate its theoretical Debye temperature. Then determine the experimental Debye temperature from Figure 7.28, and compare.

See all solutions

Recommended explanations on Physics Textbooks

View all explanations

What do you think about this solution?

We value your feedback to improve our textbook solutions.

Study anywhere. Anytime. Across all devices.

Sign-up for free