Consider a degenerate electron gas in which essentially all of the electrons are highly relativistic ϵmc2so that their energies are ϵ=pc(where p is the magnitude of the momentum vector).

(a) Modify the derivation given above to show that for a relativistic electron gas at zero temperature, the chemical potential (or Fermi energy) is given by =

μ=hc(3N/8πV)1/3

(b) Find a formula for the total energy of this system in terms of N and μ.

Short Answer

Expert verified

The chemical potential is given by:

μ=hc23NπV1/3

Total energy of the system is:

U=3N4ϵF

Step by step solution

01

Given information

Consider a degenerate electron gas in which essentially all of the electrons are highly relativistic ϵmc2 so that their energies are ϵ=pc (where p is the magnitude of the momentum vector).

02

Explanation

The allowable wavelengths and momenta for a relativistic particle in a one-dimensional box are the same as for a non-relativistic particle, and they are provided by:

λn=2Lnpn=hn2L

Where,

n is positive integer

In the three dimensional box, the momenta are:

px=hnx2Lpy=hny2Lpz=hnz2L

Energy for relativistic is:

ϵ=pc

But,

p=px2+py2+pz2

Thus,

ϵ=cpx2+py2+pz2

Substitute with momenta

localid="1650014884234" ϵ=hc2Lnx2+ny2+nz2ϵ=hcn2L

Where,

n=nx2+ny2+nz2each n can be a positive integer, so we can visualise this as a lattice of a points in the first octant.

Because we have two spin stats, the total number of electrons is equal to the volume of an octant of a sphere with radius of nmax multiplied by factor 2.

N=2×18×43πnmax3N=π3nmax3nmax=3Nπ1/3

the chemical potential is just the energy of the last level, which indicated by nmax, that is:

μ=ϵF=ϵnmax

Substitute with ϵ and nmax:

localid="1647741783682" μ=hcnmax2L=hc2L3Nπ1/3μ=hc23NL3π1/3μ=hc23NπV1/3

Here,

V=L3

03

Explanation

(b)Due to the spin, the total energy equals the sum of the energies of occupied states multiplied by factor 2, i.e.

U=2nxnynzϵ(n)

To convert this to spherical coordinates, multiply by the factor of the integration in spherical coordinates, which is n2sin(θ), as follows:

U=20π/2dΦ0π/2sin(θ)dθ0nmaxn2ϵdn

Substitute with ε

localid="1650015025150" U=hcL0π/2dΦ0π/2sin(θ)dθ0nmaxn3dnU=hcLπ2[1]nmax44U=hcπnmax48L

Substitute with nmax

localid="1650015120881" U=hcπ8L3Nπ4/3U=hcπ8L3Nπ3Nπ1/3U=3hcN8L3Nπ1/3U=3hcN83NπV1/3U=3N4hc23NπV1/3ϵFU=3N4ϵF

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Most popular questions from this chapter

For a brief time in the early universe, the temperature was hot enough to produce large numbers of electron-positron pairs. These pairs then constituted a third type of "background radiation," in addition to the photons and neutrinos (see Figure 7.21). Like neutrinos, electrons and positrons are fermions. Unlike neutrinos, electrons and positrons are known to be massive (ea.ch with the same mass), and each has two independent polarization states. During the time period of interest, the densities of electrons and positrons were approximately equal, so it is a good approximation to set the chemical potentials equal to zero as in Figure 7.21. When the temperature was greater than the electron mass times c2k, the universe was filled with three types of radiation: electrons and positrons (solid arrows); neutrinos (dashed); and photons (wavy). Bathed in this radiation were a few protons and neutrons, roughly one for every billion radiation particles. the previous problem. Recall from special relativity that the energy of a massive particle is ϵ=(pc)2+mc22.

(a) Show that the energy density of electrons and positrons at temperature Tis given by

u(T)=0x2x2+mc2/kT2ex2+mc2/kT2+1dx;whereu(T)=0x2x2+mc2/kT2ex2+mc2/kT2+1dx

(b) Show that u(T)goes to zero when kTmc2, and explain why this is a

reasonable result.

( c) Evaluate u(T)in the limit kTmc2, and compare to the result of the

the previous problem for the neutrino radiation.

(d) Use a computer to calculate and plot u(T)at intermediate temperatures.

(e) Use the method of Problem 7.46, part (d), to show that the free energy

density of the electron-positron radiation is

FV=-16π(kT)4(hc)3f(T);wheref(T)=0x2ln1+e-x2+mc2/kT2dx

Evaluate f(T)in both limits, and use a computer to calculate and plot f(T)at intermediate

temperatures.

(f) Write the entropy of the electron-positron radiation in terms of the functions

uTand f(T). Evaluate the entropy explicitly in the high-T limit.

For a system of fermions at room temperature, compute the probability of a single-particle state being occupied if its energy is

(a) 1eVless than μ

(b) 0.01eVless than μ

(c) equal to μ

(d) 0.01eVgreater than μ

(e) 1eVgreater thanμ

When the attractive forces of the ions in a crystal are taken into account, the allowed electron energies are no longer given by the simple formula 7.36; instead, the allowed energies are grouped into bands, separated by gaps where there are no allowed energies. In a conductor the Fermi energy lies within one of the bands; in this section we have treated the electrons in this band as "free" particles confined to a fixed volume. In an insulator, on the other hand, the Fermi energy lies within a gap, so that at T = 0 the band below the gap is completely occupied while the band above the gap is unoccupied. Because there are no empty states close in energy to those that are occupied, the electrons are "stuck in place" and the material does not conduct electricity. A semiconductor is an insulator in which the gap is narrow enough for a few electrons to jump across it at room temperature. Figure 7 .17 shows the density of states in the vicinity of the Fermi energy for an idealized semiconductor, and defines some terminology and notation to be used in this problem.

(a) As a first approximation, let us model the density of states near the bottom of the conduction band using the same function as for a free Fermi gas, with an appropriate zero-point: g(ϵ)=g0ϵ-ϵc, where go is the same constant as in equation 7.51. Let us also model the density of states near the top

Figure 7.17. The periodic potential of a crystal lattice results in a densityof-states function consisting of "bands" (with many states) and "gaps" (with no states). For an insulator or a semiconductor, the Fermi energy lies in the middle of a gap so that at T = 0, the "valence band" is completely full while the-"conduction band" is completely empty. of the valence band as a mirror image of this function. Explain why, in this approximation, the chemical potential must always lie precisely in the middle of the gap, regardless of temperature.

(b) Normally the width of the gap is much greater than kT. Working in this limit, derive an expression for the number of conduction electrons per unit volume, in terms of the temperature and the width of the gap.

(c) For silicon near room temperature, the gap between the valence and conduction bands is approximately 1.11 eV. Roughly how many conduction electrons are there in a cubic centimeter of silicon at room temperature? How does this compare to the number of conduction electrons in a similar amount of copper?

( d) Explain why a semiconductor conducts electricity much better at higher temperatures. Back up your explanation with some numbers. (Ordinary conductors like copper, on the other hand, conduct better at low temperatures.) (e) Very roughly, how wide would the gap between the valence and conduction bands have to be in order to consider a material an insulator rather than a semiconductor?

In a real semiconductor, the density of states at the bottom of the conduction band will differ from the model used in the previous problem by a numerical factor, which can be small or large depending on the material. Let us, therefore, write for the conduction band g(ϵ)=g0cϵ-ϵcwhere g0cis a new normalization constant that differs from g0by some fudge factor. Similarly, write gat the top of the valence band in terms of a new normalization constant g0v.

(a) Explain why, if g0vg0c, the chemical potential will now vary with temperature. When will it increase, and when will it decrease?

(b) Write down an expression for the number of conduction electrons, in terms of T,μ,candg0cSimplify this expression as much as possible, assuming ϵc-μkT.

(c) An empty state in the valence band is called a hole. In analogy to part (b), write down an expression for the number of holes, and simplify it in the limit μ-ϵvkT.

(d) Combine the results of parts (b) and (c) to find an expression for the chemical potential as a function of temperature.

(e) For silicon, g0cg0=1.09andg0vg0=0.44*.Calculate the shift inµ for silicon at room temperature.

Suppose you have a "box" in which each particle may occupy any of 10single-particle states. For simplicity, assume that each of these states has energy zero.

(a) What is the partition function of this system if the box contains only one particle?

(b) What is the partition function of this system if the box contains two distinguishable particles?

(c) What is the partition function if the box contains two identical bosons?

(d) What is the partition function if the box contains two identical fermions?

(e) What would be the partition function of this system according to equation 7.16?

(f) What is the probability of finding both particles in the same single particle state, for the three cases of distinguishable particles, identical bosom, and identical fermions?

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