Most spin-1/2 fermions, including electrons and helium-3 atoms, have nonzero magnetic moments. A gas of such particles is therefore paramagnetic. Consider, for example, a gas of free electrons, confined inside a three-dimensional box. The z component of the magnetic moment of each electron is ±µa. In the presence of a magnetic field B pointing in the z direction, each "up" state acquires an additional energy of -μBB, while each "down" state acquires an additional energy of +μBB

(a) Explain why you would expect the magnetization of a degenerate electron gas to be substantially less than that of the electronic paramagnets studied in Chapters 3 and 6, for a given number of particles at a given field strength.

(b) Write down a formula for the density of states of this system in the presence of a magnetic field B, and interpret your formula graphically.

(c) The magnetization of this system is μBN-N, where Nr and N1 are the numbers of electrons with up and down magnetic moments, respectively. Find a formula for the magnetization of this system at T=0, in terms of N, µa, B, and the Fermi energy.

(d) Find the first temperature-dependent correction to your answer to part (c), in the limit TTF. You may assume that μBBkT; this implies that the presence of the magnetic field has negligible effect on the chemical potential μ. (To avoid confusing µB with µ, I suggest using an abbreviation such as o for the quantity µaB.)

Short Answer

Expert verified

(a) Magnetization of a degenerate electron,there is no restriction on electrons,every electron is change to spin.

(b) The formula of the density of states

g(ϵ)=g02ϵ-δ+g02ϵ+δ

(c) The formula for density of states

M=3NμB2B2ϵF

(d) The limit of the temperature

M=3NμB2B2ϵF1-π212kTϵF2

Step by step solution

01

Part(a) Step 1: Given information

We have to find out magnetization of a degenerate electron gas to be substantially less than that of the electronic paramagnets.

02

Part(a) Step 2:Simplify

Magnetising is very small.So, we can conclude that the a small fraction of electrons are free to filp their spin.

The fermi gas most of electrons can not flip their spin.

03

Part(b) Step 1: Given information

We have been given that g(ϵ)=g0ϵ

04

Part(b) Step 2:Simplify

Solution is as follows:

g0=π(8m)3/22h3=3N2ϵF3/2
05

Part(c) Step 1: Given information

We have been that M=μBN-N

06

Part(c) Step 2: Simplify

It will be in the form of:

M=μB2BϵF3N2ϵF3/2

M=3NμB2B2ϵF

07

Part(d) Step 1:Given information

We have to find the first temperature-dependent correction to answer to part (c) .

08

Part(d) Step 2:Simplify

The steps will be as follows:

-δϵ+δn¯FD(ϵ)dϵ=-23-δ(ϵ+δ)3/2n¯FDϵdϵ

M=3NμB2B2ϵF1-π212kTϵF2

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Most popular questions from this chapter

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron, because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

Starting from the formula for CV derived in Problem 7.70(b), calculate the entropy, Helmholtz free energy, and pressure of a Bose gas for T<Tc. Notice that the pressure is independent of volume; how can this be the case?

(a) As usual when solving a problem on a computer, it's best to start by putting everything in terms of dimensionless variables. So define t=T/Tcc=μ/kTc,andx=ϵ/kTc. Express the integral that defines μ, equation 7.122, in terms of these variables. You should obtain the equation

(b) According to Figure 7.33, the correct value of cwhen T=2Tcis approximately -0.8. Plug in these values and check that the equation above is approximately satisfied.

(c) Now vary μ, holding Tfixed, to find the precise value of μfor . Repeat for values of T/Tcranging from 1.2up to 3.0, in increments of 0.2. Plot a graph of μas a function of temperature.

The previous two problems dealt with pure semiconductors, also called intrinsic semiconductors. Useful semiconductor devices are instead made from doped semiconductors, which contain substantial numbers of impurity atoms. One example of a doped semiconductor was treated in Problem 7.5. Let us now consider that system again. (Note that in Problem 7.5 we measured all energies relative to the bottom of the conduction band, Ee. We also neglected the distinction between g0and g0c; this simplification happens to be ok for conduction electrons in silicon.)

(a) Calculate and plot the chemical potential as afunction of temperature, for silicon doped with 1017phosphorus atoms per cm3(as in Problem 7.5). Continue to assume that the conduction electrons can be treated as an ordinary ideal gas.

(b) Discuss whether it is legitimate to assume for this system that the conduction electrons can be treated asan ordinary ideal gas, as opposed to a Fermi gas. Give some numerical examples.

(c)Estimate the temperature at which the number of valence electrons excitedto the conduction band would become comparable to the number ofconduction electrons from donor impurities. Which source of conductionelectrons is more important at room temperature?

Explain in some detail why the three graphs in Figure 7.28 all intercept the vertical axis in about the same place, whereas their slopes differ considerably.

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