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Chapter 6: Problem 16

Given a \(Q\) -point of \(I_{D_{Q}}=3 \mathrm{~mA}\) and \(V_{G S}=-3 \mathrm{~V}\), determine \(I_{D S S}\) if \(V_{P}=-6 \mathrm{~V}\).

Short Answer

Expert verified
The value of \(I_{D S S}\) is \(12 \mathrm{mA}\).

Step by step solution

01

Understand the given values and necessary formula

The known values from this question include: \(Q\)-point \(I_{D_{Q}}=3 \mathrm{~mA}\), \(V_{G S}=-3 \mathrm{~V}\), and \(V_{P}=-6 \mathrm{~V}\). We're tasked with finding \(I_{D S S}\). The applicable formula is \(-I_{D}\/I_{D S S}=(1-V_{G S}\/V_{P})^2\). Let's insert these known values into the formula.
02

Substitute the given values into the formula

Substitute the given values into the formula, we get: \(-3\/I_{D S S}=(1-(-3)\/-6)^2 = (1-0.5)^2 = 0.25\). Therefore, the equation can be written as \(-3\/I_{D S S}=0.25\).
03

Solve for \(I_{D S S}\)

To find \(I_{D S S}\), we need to isolate it on one side of the equation. We can multiply both sides with \(-1\) and then divide both sides by \(0.25\) to find \(I_{D S S}\). This gives us: \(I_{D S S}=3\/0.25 = 12 \mathrm{~mA}\).

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Most popular questions from this chapter

Research CMOS logic at your local or college library, and describe the range of applications and basic advantages of the approach.

What are the relative advantages of the UMOS technology over the VMOS technology?

Does the current of an enhancement-type MOSFET increase at about the same rate as a depletiontype MOSFET for the conduction region? Carefully review the general format of the equations, and if your mathematics background includes differential calculus, calculate \(d I_{D} / d V_{G S}\) and compare its magnitude.

a. Sketch the basic construction of a \(p\) -channel depletion-type MOSFET. b. Apply the proper drain-to-source voltage and sketch the flow of electrons for \(V_{G S}=0 \mathrm{~V}\).

Given \(I_{D}=14 \mathrm{~mA}\) and \(V_{G S}=1 \mathrm{~V}\), determine \(V_{P}\) if \(I_{D S S}=9.5 \mathrm{~mA}\) for a depletion-type MOSFET.
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