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Chapter 6: Problem 17

A \(p\) -channel JFET has device parameters of \(I_{D S S}=7.5 \mathrm{~mA}\) and \(V_{P}=4 \mathrm{~V}\). Sketch the transfer characteristics.

Short Answer

Expert verified
To sketch the transfer characteristics for the given p-channel JFET, utilise the given parameters and the relationship between the drain current and gate-source voltage. As this is a p-channel JFET, the graph would be in the third quadrant with the curve starting from \(I_D = I_{DSS}\) at \(V_{GS} = 0\) and ending at \(I_D = 0\) at \(V_{GS} = V_P\). Remember to calculate individual points for varying \(V_{GS}\) and plot them correlatively.

Step by step solution

01

Determine the Relationship

In this step, we'll use the relationship for the drain current in a p-channel JFET which is given as \(I_D = I_{DSS} (1 - V_{GS}/V_{P})^2\). The parameters given are \(I_{DSS}\) as 7.5 mA and \(V_{P}\) as 4 V.
02

Construct the Transfer Characteristics

The relationship we found above is applied to create the transfer characteristic graph between \(I_D\) and \(V_{GS}\). For this, vary the gate-source voltage (\(V_{GS}\)) from 0 to the value of \(V_P\) which is 4V. For each \(V_{GS}\) compute the corresponding \(I_D\) using the relationship. Plot these points on the graph.
03

Sketch the Curve

Now, these points are connected to give the transfer characteristic. Note that the curve starts from \(I_D = I_{DSS}\) at \(V_{GS} = 0\) and reaches \(I_D = 0\) at \(V_{GS} = V_P\). Remember that as this is a p-channel JFET, the curve should be in third quadrant of the graph because both \(I_D\) and \(V_{GS}\) will be negative.

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Most popular questions from this chapter

Research CMOS logic at your local or college library, and describe the range of applications and basic advantages of the approach.

a. Describe in your own words why \(I_{G}\) is effectively \(0 \mathrm{~A}\) for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important three- terminal device?

a. Draw the basic construction of a \(p\) -channel JFET. b. Apply the proper biasing between drain and source and sketch the depletion region for \(V_{G S}=0 \mathrm{~V}\)

Sketch the transfer and drain characteristics of an \(n\) -channel depletion- type MOSFET with \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-8 \mathrm{~V}\) for a range of \(V_{G S}=-V_{P}\) to \(V_{G S}=1 \mathrm{~V}\).

What are the relative advantages of the UMOS technology over the VMOS technology?
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