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Chapter 6: Problem 32

Given \(I_{D}=4 \mathrm{~mA}\) at \(V_{G S}=-2 \mathrm{~V}\), determine \(I_{D S S}\) if \(V_{P}=-5 \mathrm{~V}\).

Short Answer

Expert verified
The saturation drain current with gate shorted to the source, \(I_{DSS}\), is 11.11 mA.

Step by step solution

01

Identify the quantities that are given.

We have been given the drain current \(I_D = 4 mA\), the gate-source voltage \(V_{GS} = -2 V\), and the pinch-off voltage \(V_P = -5 V\).
02

Re-arrange the MOSFET drain current equation to solve for \(I_{DSS}\)

So the equation \(I_D = I_{DSS}(1 - V_{GS}/V_P)^2\) can be re-arranged to solve for \(I_{DSS}\) which is \(I_{DSS} = I_D / (1 - V_{GS}/V_P)^2\)
03

Substitute in the values to find \(I_{DSS}\).

Then we plug in the given values: \(I_{DSS} = 4 / (1 - (-2/-5))^2 = 4 / (1 - 0.4)^2 = 4 / 0.36 = 11.11 mA\). Hence, \(I_{DSS}\) = 11.11 mA.

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Most popular questions from this chapter

Given a depletion-type MOSFET with \(I_{D S S}=6 \mathrm{~mA}\) and \(V_{P}=-3 \mathrm{~V}\), determine the drain current at \(V_{G S}=-1,0,1\), and \(2 \mathrm{~V}\). Compare the difference in current levels between \(-1 \mathrm{~V}\) and \(0 \mathrm{~V}\) with the difference between \(1 \mathrm{~V}\) and \(2 \mathrm{~V}\). In the positive \(V_{G S}\) region, does the drain current increase at a significantly higher rate than for negative values? Does the \(I_{D}\) curve become more and more vertical with increasing positive values of \(V_{G S} ?\) Is there a linear or a nonlinear relationship between \(I_{D}\) and \(V_{G S}\) ? Explain.

Sketch the transfer characteristics of a \(p\) -channel enhancement-type MOSFET if \(V_{T}=-5 \mathrm{~V}\) and \(k=0.45 \times 10^{-3} \mathrm{~A} / \mathrm{V}^{2}\).

Explain in your own words why the application of a positive voltage to the gate of an \(n\) -channel depletion-type MOSFET will result in a drain current exceeding \(I_{D S S}\).

a. What is the significant difference between the construction of an enhancement-type MOSFET and a depletion-type MOSFET? b. Sketch a \(p\) -channel enhancement-type MOSFET with the proper biasing applied \(\left(V_{D S}>0 \mathrm{~V}, V_{G S}>V_{T}\right)\) and indicate the channel, the direction of electron flow, and the resulting depletion region. c. In your own words, briefly describe the basic operation of an enhancement- type MOSFET.

A \(p\) -channel JFET has device parameters of \(I_{D S S}=7.5 \mathrm{~mA}\) and \(V_{P}=4 \mathrm{~V}\). Sketch the transfer characteristics.
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