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Chapter 6: Problem 36

a. Sketch the transfer and drain characteristics of an \(n\) -channel enhancement-type MOSFET if \(V_{T}=3.5 \mathrm{~V}\) and \(k=0.4 \times 10^{-3} \mathrm{~A} / \mathrm{V}^{2}\) b. Repeat part (a) for the transfer characteristics if \(V_{T}\) is maintained at \(3.5 \mathrm{~V}\) but \(k\) is increased by \(100 \%\) to \(0.8 \times 10^{-3} \mathrm{~A} / \mathrm{V}^{2}\).

Short Answer

Expert verified
The transfer characteristic for an n-channel enhancement-type MOSFET has ID = 0 for VGS < VT and ID > 0 for VGS > VT. For a given VDS, increasing VGS leads to an increase in ID. Similarly, for a given VGS, increasing VDS also increases ID. When k is increased while keeping VT constant, the slope of the transfer characteristic for VGS > VT increases, indicating an overall increase in ID for a given VGS. Hence, increasing k while maintaining VT enhances the operation of the MOSFET.

Step by step solution

01

Understand the Characteristics of a MOSFET

The transfer characteristic of a MOSFET is a graph of the drain current (ID) versus the gate-to-source voltage (VGS) for a given drain-to-source voltage (VDS). The drain characteristic of a MOSFET is a graph of the drain current (ID) versus the drain-to-source voltage (VDS) for a given gate-to-source voltage (VGS). For an n-channel enhancement-type MOSFET, ID = 0 for VGS < VT, and ID > 0 for VGS > VT, indicating that the MOSFET is turned ON when VGS > VT.
02

Sketch the Transfer and Drain Characteristics for Part a

For VT = 3.5V, and k=0.4×10^-3 A/V^2, sketch the transfer characteristic with ID on the y-axis and VGS on the x-axis. Plot the graph starting from ID = 0 for VGS < VT, then use the equation ID = k(VGS - VT)^2/2 to plot the graph for VGS > VT. Also sketch the drain characteristic with ID on the y-axis and VDS on the x-axis.
03

Sketch the Transfer Characteristics for Part b

For VT = 3.5V, and k=0.8×10^-3 A/V^2, sketch the transfer characteristic with ID on the y-axis and VGS on the x-axis. Plot the graph starting from ID = 0 for VGS < VT, then use the equation ID = k(VGS - VT)^2/2 to plot the graph for VGS > VT. Given that k has doubled, the slope of the transfer characteristic for VGS > VT will be steeper than in part a, indicating a higher current for a given VGS.

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Most popular questions from this chapter

Given \(I_{D}=4 \mathrm{~mA}\) at \(V_{G S}=-2 \mathrm{~V}\), determine \(I_{D S S}\) if \(V_{P}=-5 \mathrm{~V}\).

A \(p\) -channel JFET has device parameters of \(I_{D S S}=7.5 \mathrm{~mA}\) and \(V_{P}=4 \mathrm{~V}\). Sketch the transfer characteristics.

Sketch the transfer and drain characteristics of an \(n\) -channel depletion- type MOSFET with \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-8 \mathrm{~V}\) for a range of \(V_{G S}=-V_{P}\) to \(V_{G S}=1 \mathrm{~V}\).

Sketch the curve of \(I_{D}=0.5 \times 10^{-3}\left(V_{G S}^{2}\right)\) and \(I_{D}=0.5 \times 10^{-3}\left(V_{G S}-4\right)^{2}\) for \(V_{G S}\) from \(0 \mathrm{~V}\) to \(10 \mathrm{~V}\). Does \(V_{T}=4 \mathrm{~V}\) have a significant effect on the level of \(I_{D}\) for this region?

Explain in your own words why the application of a positive voltage to the gate of an \(n\) -channel depletion-type MOSFET will result in a drain current exceeding \(I_{D S S}\).
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