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Chapter 6: Problem 45

What are the relative advantages of the UMOS technology over the VMOS technology?

Short Answer

Expert verified
The UMOS technology has advantages over the VMOS technology in terms of allowing for a smaller cell size and thereby higher device density, providing a higher breakdown voltage due to the inclusion of a Punch Through Stopper, and causing less degradation of device performance over time due to reduced hot carrier injection.

Step by step solution

01

Understand UMOS Technology

UMOS or U-groove MOSFET technology is characterized by its U-shaped groove that isolates the drain from the channel region. This configuration minimizes the distance between the drain and the source, allowing for a smaller cell size and thereby making it possible to fit more cells into a given area. The U-groove also concentrates the electric field lines within the groove and thus reduces the peak electric field between the drain and the channel.
02

Understand VMOS Technology

The VMOS or V-groove Metal Oxide Semiconductor FET is another type of power MOSFET. The 'V' in VMOS is from the V-shaped groove that is cut vertically into the substrate material. The V-groove gives vertical current flow rather than lateral current flow. This allows for a larger channel area and thus a higher current capacity.
03

Compare Advantages of UMOS over VMOS

UMOS has a few relative advantages over VMOS. First, it allows for a smaller cell size due to the U-grove, allowing for more cells to be packed into a given area, which can increase the density of the device. Second, the structure of UMOS includes a Punch Through Stopper that prevents the punch through (a phenomenon that can cause device failure) and thus leads to a higher breakdown voltage. Third, the U-shape groove in UMOS also concentrates the electric field lines and reduces the peak electric field, leading to reduced hot carrier injection, which can cause degradation of device performance over time.

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Most popular questions from this chapter

a. Describe in your own words why \(I_{G}\) is effectively \(0 \mathrm{~A}\) for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important three- terminal device?

Sketch the transfer and drain characteristics of an \(n\) -channel depletion- type MOSFET with \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-8 \mathrm{~V}\) for a range of \(V_{G S}=-V_{P}\) to \(V_{G S}=1 \mathrm{~V}\).

Given a \(Q\) -point of \(I_{D_{Q}}=3 \mathrm{~mA}\) and \(V_{G S}=-3 \mathrm{~V}\), determine \(I_{D S S}\) if \(V_{P}=-6 \mathrm{~V}\).

Using an average value of \(2.9 \mathrm{~mA}\) for the \(I_{D S S}\) of the 2N3797 MOSFET of Fig. 31 , determine the level of \(V_{G S}\) that will result in a maximum drain current of \(20 \mathrm{~mA}\) if \(V_{P}=-5 \mathrm{~V}\).

In what ways is the construction of a depletion-type MOSFET similar to that of a JFET? In what ways is it different?
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