Chapter 6: Problem 9
In general, comment on the polarity of the various voltages and direction of the currents for an \(n\) -channel JFET versus a \(p\) -channel JFET.
Chapter 6: Problem 9
In general, comment on the polarity of the various voltages and direction of the currents for an \(n\) -channel JFET versus a \(p\) -channel JFET.
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Get started for freeUsing an average value of \(2.9 \mathrm{~mA}\) for the \(I_{D S S}\) of the 2N3797 MOSFET of Fig. 31 , determine the level of \(V_{G S}\) that will result in a maximum drain current of \(20 \mathrm{~mA}\) if \(V_{P}=-5 \mathrm{~V}\).
Does the current of an enhancement-type MOSFET increase at about the same rate as a depletiontype MOSFET for the conduction region? Carefully review the general format of the equations, and if your mathematics background includes differential calculus, calculate \(d I_{D} / d V_{G S}\) and compare its magnitude.
a. Describe in your own words why \(I_{G}\) is effectively \(0 \mathrm{~A}\) for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important three- terminal device?
a. Sketch the transfer and drain characteristics of an \(n\) -channel enhancement-type MOSFET if \(V_{T}=3.5 \mathrm{~V}\) and \(k=0.4 \times 10^{-3} \mathrm{~A} / \mathrm{V}^{2}\) b. Repeat part (a) for the transfer characteristics if \(V_{T}\) is maintained at \(3.5 \mathrm{~V}\) but \(k\) is increased by \(100 \%\) to \(0.8 \times 10^{-3} \mathrm{~A} / \mathrm{V}^{2}\).
a. Describe in your own words why the VMOS FET can withstand a higher current and power rating than devices constructed with standard techniques. b. Why do VMOS FETs have reduced channel resistance levels? c. Why is a positive temperature coefficient desirable?
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