Chapter 8: Problem 3
For a JFET having device parameters \(g_{m 0}=5 \mathrm{mS}\) and \(V_{P}=-4 \mathrm{~V}\), what is the device current at \(V_{G S}=0 \mathrm{~V} ?\)
Chapter 8: Problem 3
For a JFET having device parameters \(g_{m 0}=5 \mathrm{mS}\) and \(V_{P}=-4 \mathrm{~V}\), what is the device current at \(V_{G S}=0 \mathrm{~V} ?\)
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Get started for freeA JFET \(\left(I_{D S S}=10 \mathrm{~mA}, V_{P}=-5 \mathrm{~V}\right)\) is biased at \(I_{D}=I_{D S S} / 4\). What is the value of \(g_{m}\) at that bias point?
a. Plot \(g_{m}\) versus \(V_{G S}\) for an \(n\) -channel JFET with \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-6 \mathrm{~V}\). b. Plot \(g_{m}\) versus \(I_{D}\) for the same \(n\) -channel JFET as part (a).
Calculate \(g_{m 0}\) for a JFET having device parameters \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-4 \mathrm{~V}\).
Determine the pinch-off voltage of a JFET with \(g_{m 0}=10 \mathrm{mS}\) and \(I_{D S S}=12 \mathrm{~mA}\).
If a JFET having a specified value of \(r_{d}=100 \mathrm{k} \Omega\) has an ideal voltage gain of \(A_{v}(\mathrm{FET})=-200\), what is the value of \(g_{m}\) ?
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