What is the Fermi energy of gold (a monovalent metal with molar mass 197 g/mol and density 19.3g/cm3 )?

Short Answer

Expert verified

The Fermi energy of gold is 5.52eV.

Step by step solution

01

The given data

  • Molar mass of gold, A = 197 g/mol
  • Density of gold,d=19.30g/cm3
  • Gold is a monovalent metal.
02

Understanding the concept of Fermi energy

Using the given formula for the number of atoms per unit volume, we can get the required value of the conduction electrons per unit volume, considering that metal is monovalent. Now using this value in the equation of Fermi energy, we can calculate the Fermi energy of the metal.

Formulae:

The mass of an atom, M=A/NA,whereNA=6.022×1023mol-1 (i)

The number density of conduction electrons, n=dM (ii)

d=density of the atom, M = mass of a single atom

The equation of Fermi energy is EF=0.121h2mn2/3 (iii)

03

Calculation of Fermi energy

As gold is monovalent metal, each atom contributes one conduction electron; thus, the number density of conduction electrons should be equal to the number density of atoms.

For the given data, comparing equation (i) and (ii), we get the number density of the conduction electrons in gold as follows:

n=dA/NA=19.3g/cm3197g/mol/6.022×1023mol-1=5.90×1022cm-3=59.0nm-3

Using the above number density value in equation (iii), the Fermi energy of gold metal can be calculated as follows:

EF=0.121hc2mec2n2/3=0.1211240eV.nm2511×103eV59.0nm-32/3=5.52eV

Hence, the value of Fermi energy is 5.52 eV.

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Most popular questions from this chapter

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11eV between the top of the valence band and the bottom of the conduction band. At 300K the Fermi level of the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi level to 0.11eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

The compound gallium arsenide is a commonly used semiconductor, has an energy gap Egof1.43eV. Its crystal structure is like that of silicon, except that half the silicon atoms are replaced by gallium atoms and half by arsenic atoms. Draw a flattened-out sketch of the gallium arsenide lattice, following the pattern of Fig. 41-10a.What is the net charge of the (a) gallium and (b) arsenic ion core? (c) How many electrons per bond are there? (Hint:Consult the periodic table in Appendix G.)

If the temperature of a piece of a metal is increased, does the probability of occupancy 0.1 eV above the Fermi level increase, decrease, or remain the same?

Silver is a monovalent metal. Calculate (a) the number density of conduction electrons, (b) the Fermi energy, (c) the Fermi speed and (d) the de Broglie wavelength corresponding to this electron speed. See Appendix F for the needed data on silver.

Use Eq. 41-9 to verify 7.0eV as copper’s Fermi energy.

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