Show that Eq. 41-5 can be written as N(E)=CE1/2. (b) Evaluatein terms of meters and electron-volts. (c) CalculateN(E)forE=5.00eV for .

Short Answer

Expert verified
  1. The density of the states of conduction electrons is NE=CE1/2.
  2. The value of the constant in meters and electron-volts is 6.81×1027m-3.eV-2/3.
  3. The density of states for is E=5eVis1.52×1028eV-1.m-3.

Step by step solution

01

The given data

  1. The given energy value,E=5eV
02

Understanding the concept of density of states

Using the formula of the density of states associated with the conduction electrons of metal, we can get the required value of the density of the state for the given energy and constant values.

N(E)=82ττm3/2h3E1/2

03

a) Calculation of the formula of density of states

From the given equation of density of states of the conduction electrons of a metal, we get thatNE=CE1/2....................a

where

C=82πm3/2h3=82π9.1×10-31kg3/26.63×10-34J.s3=1062×1056kg3/2J3.s3

Hence, the density of the states of conduction electrons is NE=CE1/2.

04

b) Calculation of the value of constant C in meters and electron-volts

We know that 1J=1kg.m2/s2

So, considering the equation of kinetic energy K=12mv2the unit of mass is 1kg=1J.s2m-2.

Thus, the units of C becomes-

J.s23/2.m-23/2.J-3.s-3=J-3/2m-3

Now, the value of C in meters and electron-volts can be given as:

C=1.062×1056kg3/2/J3.s31.602×10-19J/eV3/2=6.81×1027m-3.eV-2/3

Hence, the value of C is 6.81×1027m-3.eV-2/3.

05

c) Calculation of the density of states for the given energy

Using the given energy value in equation (a) of density in part (a), we can get the density of the states of the conduction electrons of the metal as follows:

NE=6.81×1027m-3.eV-2/35eV1/2=1.52×1028eV-1.m-3

Hence, the value of the density of electrons is 1.52×1028eV-1.m-3.

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Most popular questions from this chapter

(a) Show that the slope dP/dEof Eq. 41-6 evaluated atE=EFis -1/4kT. (b) Show that the tangent line to the curve of Fig. 41-7bevaluated atE=EFintercepts the horizontal axis atE=EF+2kT.

The compound gallium arsenide is a commonly used semiconductor, has an energy gap Egof1.43eV. Its crystal structure is like that of silicon, except that half the silicon atoms are replaced by gallium atoms and half by arsenic atoms. Draw a flattened-out sketch of the gallium arsenide lattice, following the pattern of Fig. 41-10a.What is the net charge of the (a) gallium and (b) arsenic ion core? (c) How many electrons per bond are there? (Hint:Consult the periodic table in Appendix G.)

Figure 41-1bshows 18 atoms that represent the unit cell of silicon. Fourteen of these atoms, however, are shared with one or more adjoining unit cells. What is the number of atoms per unit cell for silicon? (See Question 2)

The energy gaps Egfor the semiconductors silicon and germanium are, respectively, 1.12 and 0.67eV . Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.

Use the result of Problem 23 to calculate the total translational kinetic energy of the conduction electrons in 1.00cm3 of copper at T = 0K.

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