In the biased p-njunctions shown in Fig. 41-15, there is an electric field Ein each of the two depletion zones, associated with the potential difference that exists across that zone. (a) Is the electric field vector directed from left to right in the figure or from right to left? (b) Is the magnitude of the field greater for forward bias or for back bias?

Short Answer

Expert verified
  1. The electric field vector is directed from the right to the left in the figure.
  2. The magnitude of the field is greater for reverse bias.

Step by step solution

01

The given data

There are two biased p-n junctions, where the electric field is present in the two depletion zones: forward bias and reverse bias.

02

Understanding the concept of the electric field in the depletion region

When we apply a potential difference across the p-n junction, if we connect the positive terminal of the battery with the p-type semiconductor and the negative terminal with the n-type semiconductor, the p-n junction is said to be forward biased. In this case, the current can easily flow through the junction.

03

a) Calculation of the direction of the electric field

When the p-n junction is forward biased, the current can easily through the junction. Thus, the direction of the electric field is from left to right inside the junction.

04

b) Calculation of the magnitude of the electric field

When a reverse bias is applied across the junction, the electric is so developed such that it does not allow the flow of any majority charge carriers a small current is still observed due to the flow of minority charge carriers which move through the junction with drift velocity. Thus, the electric field is from left to right.

Unlock Step-by-Step Solutions & Ace Your Exams!

  • Full Textbook Solutions

    Get detailed explanations and key concepts

  • Unlimited Al creation

    Al flashcards, explanations, exams and more...

  • Ads-free access

    To over 500 millions flashcards

  • Money-back guarantee

    We refund you if you fail your exam.

Over 30 million students worldwide already upgrade their learning with Vaia!

One App. One Place for Learning.

All the tools & learning materials you need for study success - in one app.

Get started for free

Most popular questions from this chapter

A certain material has a molar mass of 20.0g/mol , Fermi energy of 5.00 eV , and 2 valence electrons per atom. What is the density (g/cm3)?

Zinc is a bivalent metal. Calculate (a) the number density of conduction electrons, (b) the Fermi energy, (c) the Fermi speed, and (d) the de Broglie wavelength corresponding to this electron speed. See Appendix F for the needed data on zinc.

Consider a copper wire that is carrying, say, a few amperes of current. Is the drift speed vdof the conduction electrons that form that current about equal to, much greater than, or much less than the Fermi speed vFfor copper (the speed associated with the Fermi energy for copper)?

On which of the following does the interval between adjacent energy levels in the highest occupied band of a metal depend: (a) the material of which the sample is made, (b) the size of the sample, (c) the position of the level in the band, (d) the temperature of the sample, (e) the Fermi energy of the metal?

Pure silicon at room temperature has an electron number density in the conduction band of about 5.00×1015m-3and an equal density of holes in the valence band. Suppose that one of every 107silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?

See all solutions

Recommended explanations on Physics Textbooks

View all explanations

What do you think about this solution?

We value your feedback to improve our textbook solutions.

Study anywhere. Anytime. Across all devices.

Sign-up for free