Chapter 18: Problem 43
Briefly describe electron and hole motions in a \(p-n\) junction for forward and reverse biases; then explain how these lead to rectification.
Chapter 18: Problem 43
Briefly describe electron and hole motions in a \(p-n\) junction for forward and reverse biases; then explain how these lead to rectification.
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Get started for freeBriefly tell what is meant by the drift velocity and mobility of a free electron.
Estimate the electrical conductivity, at \(135^{\circ} \mathrm{C}\) of silicon that has been doped with \(10^{24} \mathrm{m}\) of aluminum atoms
(a) Calculate the number of free electrons per cubic meter for silver, assuming that there are 1.3 free electrons per silver atom. The electrical conductivity and density for Ag are \(6.8 \times 10^{7}(\Omega-\mathrm{m})^{-1}\) and \(10.5 \mathrm{g} / \mathrm{cm}^{3}, \mathrm{re}\) spectively. (b) Now compute the electron mobility for Ag.
Germanium to which \(10^{24} \mathrm{m}^{-3}\) As atoms have been added is an extrinsic semiconductor at room temperature, and virtually all the As atoms may be thought of as being ionized (i.e., one charge carrier exists for each As atom). (a) Is this material \(n\) -type or \(p\) -type? (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and \(0.05 \mathrm{m}^{2} / \mathrm{V}\) -s, respectively
How does the clectron structure of an isolated atom differ from that of a solid material?
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