Chapter 18: Problem 46
Cite the differences in operation and application for junction transistors and MOSFETs.
Chapter 18: Problem 46
Cite the differences in operation and application for junction transistors and MOSFETs.
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Get started for freeIn terms of electron energy band structure, discuss reasons for the difference in electrical conductivity between metals, semiconductors, and insulators
Will each of the following elements act as a donor or an acceptor when added to the indicated semiconducting material? Assume that the impurity elements are substitutional.$$\begin{array}{cc} \hline \text {Impurity} & \text {Semiconductor} \\ \hline \mathrm{N} & \mathrm{Si} \\ \mathrm{B} & \mathrm{Ge} \\ \mathrm{S} & \mathrm{InSb} \\ \mathrm{In} & \mathrm{CdS} \\ \mathrm{As} & \mathrm{ZnTe} \\ \hline \end{array}$$
Briefly describe electron and hole motions in a \(p-n\) junction for forward and reverse biases; then explain how these lead to rectification.
(a) Compute the electrical conductivity of a \(7.0-\mathrm{mm}(0.28 \text { -in. })\) diameter cylindrical sil icon specimen \(57 \mathrm{mm}(2.25\) in.) long in which a current of 0.25 A passes in an axial direction. A voltage of \(24 \mathrm{V}\) is measured across two probes that are separated by \(45 \mathrm{mm}(1.75 \text { in. })\) (b) Compute the resistance over the entire \(57 \mathrm{mm}(2.25 \text { in. })\) of the specimen.
Estimate the temperature at which GaAs has an electrical conductivity of \(1.6 \times 10^{-3}\) \((\Omega-m)^{-1}\) assuming the temperature dependence for \(\sigma\) of Equation \(18.36 .\) The data shown in Table 18.3 might prove helpful.
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