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Chapter 18: Problem 7

How does the clectron structure of an isolated atom differ from that of a solid material?

Short Answer

Expert verified
Answer: The electron structure of an isolated atom differs from that of a solid material in terms of electron distribution, energy levels, and electron behavior. In an isolated atom, electrons are distributed in discrete, quantized energy levels known as electron shells, and electron movement occurs through quantum jumps. In a solid material, electron clouds overlap and form continuous energy bands, changing the energy levels and influencing electron behavior based on the material's properties such as conductivity and bandgap.

Step by step solution

01

Understand the electron structure of an isolated atom

In an isolated atom, the electrons are arranged in discrete energy levels known as electron shells. These shells are made up of specific types of orbitals (s, p, d, and f) that can hold a certain number of electrons.
02

Understand the electron structure of a solid material

In a solid material, atoms are closely packed together, and their electron clouds overlap. This causes the energy levels to broaden and form energy bands, which can be further classified as valence bands and conduction bands. In metals, the valence band is partially filled, allowing for easy movement of electrons, making them good conductors. In insulators and semiconductors, there is an energy gap between valence bands and conduction bands, known as a bandgap. Insulators have a large bandgap, making it difficult for electrons to move to the conduction band, while semiconductors have a smaller bandgap, allowing limited electron movement.
03

Compare the electron distribution in an isolated atom and a solid material

In an isolated atom, electrons are distributed in specific energy levels, also known as electron shells. These shells have quantized energy levels and fixed capacities. On the other hand, in a solid material, the overlapping of electron clouds from closely packed atoms causes the formation of continuous energy bands with varying energy levels.
04

Compare the energy levels in an isolated atom and a solid material

In an isolated atom, the energy levels are discrete and quantized, with set energy differences between one shell and another. In a solid material, energy levels form continuous bands due to the close proximity of atoms and the subsequent blending of energy levels.
05

Compare the electron behavior in an isolated atom and a solid material

In an isolated atom, electron movement is primarily determined by the allowed orbits and energy levels they can occupy. Transitions between energy levels can only happen via quantum jumps, where electrons absorb or emit specific amounts of energy (photons). In a solid material, however, the electron behavior is influenced by the distribution of energy bands, bandgap, and electrical properties of the material (such as conductivity and mobility). Based on these comparisons, the electron structure of an isolated atom differs from that of solid material in terms of electron distribution, energy levels, and electron behavior.

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Most popular questions from this chapter

What are the two functions that a transistor may perform in an electronic circuit?

Will each of the following elements act as a donor or an acceptor when added to the indicated semiconducting material? Assume that the impurity elements are substitutional.$$\begin{array}{cc} \hline \text {Impurity} & \text {Semiconductor} \\ \hline \mathrm{N} & \mathrm{Si} \\ \mathrm{B} & \mathrm{Ge} \\ \mathrm{S} & \mathrm{InSb} \\ \mathrm{In} & \mathrm{CdS} \\ \mathrm{As} & \mathrm{ZnTe} \\ \hline \end{array}$$

Estimate the temperature at which GaAs has an electrical conductivity of \(1.6 \times 10^{-3}\) \((\Omega-m)^{-1}\) assuming the temperature dependence for \(\sigma\) of Equation \(18.36 .\) The data shown in Table 18.3 might prove helpful.

(a) The room-temperature electrical conductivity of a silicon specimen is \(500(\Omega-\mathrm{m})^{-1}\) The hole concentration is known to be \(2.0 \times 10^{22} \mathrm{m}^{-3}\). Using the electron and hole mobilities for silicon in Table \(18.3,\) compute the electron concentration. (b) On the basis of the result in part (a), is the specimen intrinsic \(n\) -type extrinsic, or \(p\) -type extrinsic? Why?

(a) For cach of the three types of polarization, briefly describe the mechanism by which dipoles are induced and/or oriented by the action of an applied electric field. (b) For gaseous argon, solid LiF, liquid \(\mathrm{H}_{2} \mathrm{O}\) and solid Si, what kind(s) of polarization is (are) possible? Why?
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