Chapter 18: Problem 9
Briefly tell what is meant by the drift velocity and mobility of a free electron.
Chapter 18: Problem 9
Briefly tell what is meant by the drift velocity and mobility of a free electron.
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Get started for freeCompare the temperature dependence of the conductivity for metals and intrinsic semiconductors. Briefly explain the difference in behavior.
Briefly describe electron and hole motions in a \(p-n\) junction for forward and reverse biases; then explain how these lead to rectification.
At temperatures between \(540^{\circ} \mathrm{C}(813 \mathrm{K})\) and \(727^{\circ} \mathrm{C}(1000 \mathrm{K}),\) the activation energy and preexponential for the diffusion coefficient of \(\mathrm{Na}^{+}\) in \(\mathrm{NaCl}\) are \(173,000 \mathrm{J} / \mathrm{mol}\) and \(4.0 \times 10^{-4} \mathrm{m}^{2} / \mathrm{s},\) respectively. Compute the mobility for an \(\mathrm{Na}^{+}\) ion at \(600^{\circ} \mathrm{C}(873 \mathrm{K})\)
Will each of the following elements act as a donor or an acceptor when added to the indicated semiconducting material? Assume that the impurity elements are substitutional.$$\begin{array}{cc} \hline \text {Impurity} & \text {Semiconductor} \\ \hline \mathrm{N} & \mathrm{Si} \\ \mathrm{B} & \mathrm{Ge} \\ \mathrm{S} & \mathrm{InSb} \\ \mathrm{In} & \mathrm{CdS} \\ \mathrm{As} & \mathrm{ZnTe} \\ \hline \end{array}$$
Is it possible for compound semiconductors to exhibit intrinsic behavior? Explain your answer.
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