Chapter 18: Problem 46
Cite the differences in operation and application for junction transistors and MOSFETs.
Chapter 18: Problem 46
Cite the differences in operation and application for junction transistors and MOSFETs.
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Get started for freeA charge of \(3.5 \times 10^{-11} \mathrm{C}\) is to be stored on each plate of a parallel-plate capacitor having an area of \(160 \mathrm{~mm}^{2}\left(0.25 \mathrm{in} .^{2}\right)\) and a plate separation of \(3.5 \mathrm{~mm}(0.14 \mathrm{in}\).). (a) What voltage is required if a material having a dielectric constant of \(5.0\) is positioned within the plates? (b) What voltage would be required if a vacuum were used? (c) What are the capacitances for parts (a) and (b)? (d) Compute the dielectric displacement for part (a). (e) Compute the polarization for part (a).
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Briefly explain why the ferroelectric behavior of \(\mathrm{BaTiO}_{3}\) ceases above its ferroelectric Curie temperature.
An \(n\)-type semiconductor is known to have an electron concentration of \(3 \times 10^{18} \mathrm{~m}^{-3}\). If the electron drift velocity is \(100 \mathrm{~m} / \mathrm{s}\) in an electric field of \(500 \mathrm{~V} / \mathrm{m}\), calculate the conductivity of this material.
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