Briefly tell what is meant by the drift velocity and mobility of a free electron.

Short Answer

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Answer: The relationship between drift velocity and mobility of a free electron can be described by the equation \(v_d = \mu E\), where \(v_d\) is the drift velocity, \(\mu\) is the mobility, and \(E\) is the electric field. Drift velocity is directly proportional to the mobility of an electron, which means that a higher mobility indicates that the electron can move more easily in response to the electric field, resulting in a higher drift velocity. The mobility of an electron depends on factors such as the nature of the medium, temperature, and impurity levels present in the material.

Step by step solution

01

Defining Drift Velocity of a Free Electron

Drift velocity is the average velocity of free charge carriers, such as electrons, when they are subjected to an external electric field inside a conducting medium like a metal. The drift velocity depends on the strength of the applied electric field, the charge and the mass of the electron, and the interaction between the electron and the lattice of the conducting medium. The drift velocity can be calculated using the formula: \(v_d = \frac{I}{nAe}\) where \(v_d\) is the drift velocity, \(I\) is the current, \(n\) is the number density of charge carriers (electrons), \(A\) is the cross-sectional area of the conductor, and \(e\) is the elementary charge.
02

Defining Mobility of a Free Electron

Mobility is a property that characterizes how easily electrons can move in response to an electric field. Mathematically, it's defined as the ratio of the drift velocity of the charged particle to the strength of the electric field acting on it. The mobility of an electron can be represented as: \(\mu = \frac{v_d}{E}\) where \(\mu\) is the mobility, \(v_d\) is the drift velocity, and \(E\) is the electric field.
03

Relationship between Drift Velocity and Mobility

There is a direct relationship between drift velocity and mobility. As introduced earlier, mobility can be expressed as the ratio of drift velocity to the electric field: \(\mu = \frac{v_d}{E}\) By rearranging the formula and solving for drift velocity, we can find that: \(v_d = \mu E\) This equation shows that the drift velocity is directly proportional to the mobility of a free electron in an electric field. Higher mobility indicates that the electron can move more easily in response to the electric field, resulting in a higher drift velocity. The mobility of an electron depends on factors such as the nature of the medium (conductor, insulator or semiconductor), temperature, and impurity levels present in the material.

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Most popular questions from this chapter

Germanium to which \(5 \times 10^{22} \mathrm{~m}^{-3} \mathrm{Sb}\) atoms have been added is an extrinsic semiconductor at room temperature, and virtually all the Sb atoms may be thought of as being ionized (i.e., one charge carrier exists for each Sb atom). (a) Is this material \(n\)-type or \(p\)-type? (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of \(0.1\) and \(0.05 \mathrm{~m}^{2} / \mathrm{V} \cdot \mathrm{s}\), respectively.

A parallel-plate capacitor using a dielectric material having an \(\epsilon_{r}\) of \(2.5\) has a plate spacing of \(1 \mathrm{~mm}(0.04 \mathrm{in} .)\). If another material having a dielectric constant of \(4.0\) is used and the capacitance is to be unchanged, what must be the new spacing between the plates?

In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity between metals, semiconductors, and insulators.

(a) In your own words, explain how donor impurities in semiconductors give rise to free electrons in numbers in excess of those generated by valence band-conduction band excitations. (b) Also explain how acceptor impurities give rise to holes in numbers in excess of those generated by valence band- conduction band excitations.

A metal alloy is known to have electrical conductivity and electron mobility values of \(1.2 \times\) \(10^{7}(\Omega \cdot \mathrm{m})^{-1}\) and $0.0050 \mathrm{~m}^{2} / \mathrm{V} \cdot \mathrm{s}\(, respectively. \)\mathrm{A}$ current of \(40 \mathrm{~A}\) is passed through a specimen of this alloy that is \(35 \mathrm{~mm}\) thick. What magnetic field would need to be imposed to yield a Hall voltage of \(-3.5 \times 10^{-7} \mathrm{~V} ?\)

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