Chapter 18: Problem 9
Briefly tell what is meant by the drift velocity and mobility of a free electron.
Chapter 18: Problem 9
Briefly tell what is meant by the drift velocity and mobility of a free electron.
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Get started for freeGermanium to which \(5 \times 10^{22} \mathrm{~m}^{-3} \mathrm{Sb}\) atoms have been added is an extrinsic semiconductor at room temperature, and virtually all the Sb atoms may be thought of as being ionized (i.e., one charge carrier exists for each Sb atom). (a) Is this material \(n\)-type or \(p\)-type? (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of \(0.1\) and \(0.05 \mathrm{~m}^{2} / \mathrm{V} \cdot \mathrm{s}\), respectively.
A parallel-plate capacitor using a dielectric material having an \(\epsilon_{r}\) of \(2.5\) has a plate spacing of \(1 \mathrm{~mm}(0.04 \mathrm{in} .)\). If another material having a dielectric constant of \(4.0\) is used and the capacitance is to be unchanged, what must be the new spacing between the plates?
In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity between metals, semiconductors, and insulators.
(a) In your own words, explain how donor impurities in semiconductors give rise to free electrons in numbers in excess of those generated by valence band-conduction band excitations. (b) Also explain how acceptor impurities give rise to holes in numbers in excess of those generated by valence band- conduction band excitations.
A metal alloy is known to have electrical conductivity and electron mobility values of \(1.2 \times\) \(10^{7}(\Omega \cdot \mathrm{m})^{-1}\) and $0.0050 \mathrm{~m}^{2} / \mathrm{V} \cdot \mathrm{s}\(, respectively. \)\mathrm{A}$ current of \(40 \mathrm{~A}\) is passed through a specimen of this alloy that is \(35 \mathrm{~mm}\) thick. What magnetic field would need to be imposed to yield a Hall voltage of \(-3.5 \times 10^{-7} \mathrm{~V} ?\)
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