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Chapter 4: Problem 31

For each of the following stacking sequences found in FCC metals, cite the type of planar defect that exists: (a) ... \(A B C A B C B A C B A \ldots\) (b) ... \(A B C A B C B C A B C \ldots\) Now, copy the stacking sequences and indicate the position(s) of planar defect(s) with a vertical dashed line.

Short Answer

Expert verified
Question: Identify the type of planar defect in the given stacking sequences in FCC metals and indicate the position(s) of the planar defects. Sequence (a): \(A B C A B C B A C B A \ldots\) Sequence (b): \(A B C A B C B C A B C \ldots\) Answer: Both sequences have Stacking Faults as their planar defects. The position of the planar defects are indicated below with vertical dashed lines: (a) ... \(A B C A B C | B A C B A \ldots\) (b) ... \(A B C A B C B C | A B C \ldots\)

Step by step solution

01

Identifying Planar Defects

In order to identify the planar defects, we must first understand the conventional stacking sequence for FCC metals, which is ABCABC... and so on. A planar defect will occur when this conventional stacking sequence is interrupted. Let's first analyze the given stacking sequences: (a) ... \(A B C A B C B A C B A \ldots\) (b) ... \(A B C A B C B C A B C \ldots\)
02

Citing Planar Defects

Now that we have analyzed the sequences, let's cite the type of planar defect that exists in each of them: (a) In this sequence, the stacking is interrupted at \(A B C A B C \underline{B} A C B A \ldots\). The convention requires C layer after the second B layer, but instead, there is an extra B layer in the sequence. So, this is a Stacking Fault. (b) In this case, the interruption occurs at \(A B C A B C B C \underline{A} B C \ldots\). The convention requires C layer after the B layer, but instead, there is an extra A layer in the sequence. This is also a Stacking Fault.
03

Indicating Positions of Planar Defects

Finally, let's indicate the position(s) of these planar defects in the stacking sequences with vertical dashed lines: (a) ... \(A B C A B C | B A C B A \ldots\) (b) ... \(A B C A B C B C | A B C \ldots\) In the above sequences, the vertical dashed line (|) highlights the position of the planar defects (Stacking Faults) in each sequence.

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Most popular questions from this chapter

Calculate the activation energy for vacancy formation in aluminum, given that the equilibrium number of vacancies at \(500^{\circ} \mathrm{C}(773 \mathrm{~K})\), is \(7.57 \times 10^{23} \mathrm{~m}^{-3}\). The atomic weight and density (at \(500^{\circ} \mathrm{C}\) ) for aluminum are, respectively, \(26.98 \mathrm{~g} / \mathrm{mol}\) and \(2.62 \mathrm{~g} / \mathrm{cm}^{3}\)

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