Chapter 18: Problem 27
(a) Explain why no hole is generated by the electron excitation involving a donor impurity atom. (b) Explain why no free electron is generated by the electron excitation involving an acceptor impurity atom.
Chapter 18: Problem 27
(a) Explain why no hole is generated by the electron excitation involving a donor impurity atom. (b) Explain why no free electron is generated by the electron excitation involving an acceptor impurity atom.
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Get started for freeState the differences in operation and application for junction transistors and MOSFETs.
(a) In your own words, explain how donor impurities in semiconductors give rise to free electrons in numbers in excess of those generated by valence band-conduction band excitations. (b) Also, explain how acceptor impurities give rise to holes in numbers in excess of those generated by valence band-conduction band excitations.
(a) Calculate the number of free electrons per cubic meter for silver, assuming that there are \(1.3\) free electrons per silver atom. The electrical conductivity and density for \(\mathrm{Ag}\) are \(6.8 \times 10^{7}(\Omega \cdot \mathrm{m})^{-1}\) and \(10.5 \mathrm{~g} / \mathrm{cm}^{3}\), respectively. (b) Now, compute the electron mobility for \(\mathrm{Ag}\).
Compare the temperature dependence of the conductivity for metals and intrinsic semiconductors. Briefly explain the difference in behavior.
(a) Compute the electrical conductivity of a cylindrical silicon specimen \(7.0 \mathrm{~mm}(0.28\) in.) diameter and \(57 \mathrm{~mm}(2.25\) in.) in length in which a current of \(0.25\) A passes in an axial direction. A voltage of \(24 \mathrm{~V}\) is measured across two probes that are separated by \(45 \mathrm{~mm}\) (1.75 in.). (b) Compute the resistance over the entire \(57 \mathrm{~mm}\) (2.25 in.) of the specimen.
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