Chapter 18: Problem 52
In your own words, explain the mechanism by which charge-storing capacity is increased by the insertion of a dielectric material within the plates of a capacitor.
Chapter 18: Problem 52
In your own words, explain the mechanism by which charge-storing capacity is increased by the insertion of a dielectric material within the plates of a capacitor.
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Get started for freeBriefly explain why the ferroelectric behavior of \(\mathrm{BaTiO}_{3}\) ceases above its ferroelectric Curie temperature.
An \(n\)-type semiconductor is known to have an electron concentration of \(5 \times 10^{17} \mathrm{~m}^{-3} .\) If the electron drift velocity is \(350 \mathrm{~m} / \mathrm{s}\) in an electric field of \(1000 \mathrm{~V} / \mathrm{m}\), calculate the conductivity of this material.
For each of the following pairs of semiconductors, decide which has the smaller band gap energy, \(E_{g}\), and then cite the reason for your choice. (a) C (diamond) and Ge (b) AlP and InAs (c) GaAs and \(\mathrm{ZnSe}\) (d) \(\mathrm{ZnSe}\) and \(\mathrm{CdTe}\) (e) \(\mathrm{CdS}\) and \(\mathrm{NaCl}\)
(a) Explain why no hole is generated by the electron excitation involving a donor impurity atom. (b) Explain why no free electron is generated by the electron excitation involving an acceptor impurity atom.
The polarization \(P\) of a dielectric material positioned within a parallel- plate capacitor is to be \(4.0 \times 10^{-6} \mathrm{C} / \mathrm{m}^{2}\) (a) What must be the dielectric constant if an electric field of \(10^{5} \mathrm{~V} / \mathrm{m}\) is applied? (b) What will be the dielectric displacement \(D\) ?
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