Chapter 18: Problem 8
In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity among metals, semiconductors, and insulators.
Chapter 18: Problem 8
In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity among metals, semiconductors, and insulators.
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Get started for freeDefine the following terms as they pertain to semiconducting materials: intrinsic, extrinsic, compound, elemental. Provide an example of each.
The polarization \(P\) of a dielectric material positioned within a parallel- plate capacitor is to be \(4.0 \times 10^{-6} \mathrm{C} / \mathrm{m}^{2}\) (a) What must be the dielectric constant if an electric field of \(10^{5} \mathrm{~V} / \mathrm{m}\) is applied? (b) What will be the dielectric displacement \(D\) ?
Is it possible for compound semiconductors to exhibit intrinsic behavior? Explain your answer.
For each of the following pairs of semiconductors, decide which has the smaller band gap energy, \(E_{g}\), and then cite the reason for your choice. (a) C (diamond) and Ge (b) AlP and InAs (c) GaAs and \(\mathrm{ZnSe}\) (d) \(\mathrm{ZnSe}\) and \(\mathrm{CdTe}\) (e) \(\mathrm{CdS}\) and \(\mathrm{NaCl}\)
(a) In your own words, explain how donor impurities in semiconductors give rise to free electrons in numbers in excess of those generated by valence band-conduction band excitations. (b) Also, explain how acceptor impurities give rise to holes in numbers in excess of those generated by valence band-conduction band excitations.
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