Self-diffusion involves the motion of atoms that are all of the same type; therefore, it is not subject to observation by compositional changes, as with interdiffusion. Suggest one way in which selfdiffusion may be monitored.

Short Answer

Expert verified
Answer: The radioactive tracer technique can be used to monitor self-diffusion in a material. It involves replacing a small amount of atoms in the material with their radioactive isotopes, which emit detectable radiation as they undergo decay. By measuring the changes in emitted radiation over time, we can observe the motion of atoms of the same type within the material, even when there are no compositional changes.

Step by step solution

01

Understanding Self-diffusion

First, it's important to understand what self-diffusion is. Self-diffusion is the process where atoms of the same type move or exchange positions within a material. In other words, atoms move from one site to another in the same material structure without any compositional changes.
02

Identifying the challenge in monitoring self-diffusion

Monitoring self-diffusion can be challenging since there are no compositional changes taking place during this process. Conventional methods used for monitoring diffusion like tracking changes in concentration of atoms or elements cannot be used in this case. Thus, we need an alternative method to observe the motion of the same type of atoms within the material.
03

Suggesting a method to monitor self-diffusion

One way to monitor self-diffusion is using a radioactive tracer technique. In this method, a small amount of atoms within a material are replaced with their radioactive isotopes. These radioactive atoms will have the same chemical properties as the non-radioactive atoms, but they emit detectable radiation as they undergo decay.
04

Monitoring the radioactive tracer

By placing a radiation detector near the material, we can measure the radiation emitted from the radioactive atoms. Over time, as the radioactive atoms move through the material via self-diffusion, the radiation detected at different locations within the material will change. This change in detected radiation can be used to monitor the self-diffusion process and calculate the diffusion coefficients of the atoms in the material. In summary, to monitor self-diffusion, we can use the radioactive tracer technique, which involves replacing a small amount of atoms in a material with their radioactive isotopes and measuring the changes in emitted radiation over time. This method allows us to observe the motion of atoms of the same type within a material, even when there are no compositional changes.

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Most popular questions from this chapter

Consider the diffusion of some hypothetical metal Y into another hypothetical metal \(Z\) at \(950^{\circ} \mathrm{C}\); after \(10 \mathrm{~h}\) the concentration at the \(0.5 \mathrm{~mm}\) position (in metal \(Z\) ) is \(2.0 \mathrm{wt} \% \mathrm{Y}\). At what position will the concentration also be \(2.0 \mathrm{wt} \% \mathrm{Y}\) after a \(17.5-\mathrm{h}\) heat treatment again at \(950^{\circ} \mathrm{C}\) ? Assume preexponential and activation energy values of \(4.3 \times 10^{-4} \mathrm{~m}^{2} / \mathrm{s}\) and \(180,000 \mathrm{~J} / \mathrm{mol}\), respectively, for this diffusion system.

The diffusion coefficients for nickel in iron are given at two temperatures, as follows: \begin{tabular}{cc} \hline \(\boldsymbol{T}(\boldsymbol{K})\) & \(\boldsymbol{D}\left(\mathrm{m}^{2} / \mathrm{s}\right)\) \\ \hline 1473 & \(2.2 \times 10^{-15}\) \\ \hline 1673 & \(4.8 \times 10^{-14}\) \\ \hline \end{tabular} (a) Determine the values of \(D_{0}\) and the activation energy \(Q_{d^{\prime}}\) (b) What is the magnitude of \(D\) at \(1300^{\circ} \mathrm{C}(1573 \mathrm{~K}) ?\)

The activation energy for the diffusion of copper in silver is \(193,000 \mathrm{~J} / \mathrm{mol}\). Calculate the diffusion coefficient at \(1200 \mathrm{~K}\left(927^{\circ} \mathrm{C}\right)\), given that \(D\) at \(1000 \mathrm{~K}\left(727^{\circ} \mathrm{C}\right)\) is \(1.0 \times 10^{-14} \mathrm{~m}^{2} / \mathrm{s}\).

Indium atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of In in this silicon material is known to be \(2 \times 10^{20}\) atoms \(/ \mathrm{m}^{3}\). The drive-in diffusion treatment is to be carried out at \(1175^{\circ} \mathrm{C}\) for a period of \(2.0 \mathrm{~h}\), whichgives a junction depth \(x_{j}\) of \(2.35 \mu \mathrm{m}\). Compute the predeposition diffusion time at \(925^{\circ} \mathrm{C}\) if the surface concentration is maintained at a constant level of \(2.5 \times 10^{26}\) atoms \(/ \mathrm{m}^{3}\). For the diffusion of In in Si. values of \(Q_{d}\) and \(D_{0}\) are \(3.63 \mathrm{eV} /\) atom and \(7.85 \times 10^{-5} \mathrm{~m}^{2} / \mathrm{s}\), respectively.

Carbon is allowed to diffuse through a steel plate 10 -mm thick. The concentrations of carbon at the two faces are \(0.85\) and \(0.40 \mathrm{~kg} \mathrm{C} / \mathrm{cm}^{3} \mathrm{Fe}\), which are maintained constant. If the preexponential and activation energy are \(5.0 \times 10^{-7} \mathrm{~m}^{2} / \mathrm{s}\) and 77,000 \(\mathrm{J} / \mathrm{mol}\), respectively, compute the temperature at which the diffusion flux is \(6.3 \times 10^{-10} \mathrm{~kg} / \mathrm{m}^{2} \mathrm{~s}\).

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