Chapter 5: Problem 6
Briefly explain the concept of steady state as it applies to diffusion.
Chapter 5: Problem 6
Briefly explain the concept of steady state as it applies to diffusion.
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Get started for freeThe purification of hydrogen gas by diffusion through a palladium sheet was discussed in Section 5.3. Compute the number of kilograms of hydrogen that pass per hour through a \(6-\mathrm{mm}\) thick sheet of palladium having an area of \(0.25 \mathrm{~m}^{2}\) at \(600^{\circ} \mathrm{C}\). Assume a diffusion coefficient of \(1.7 \times 10^{-8} \mathrm{~m}^{2} / \mathrm{s}\), that the respective concentrations at the high- and low-pressure sides of the plate are \(2.0\) and \(0.4 \mathrm{~kg}\). of hydrogen per cubic meter of palladium, and that steady-state conditions have been attained.
Consider the diffusion of some hypothetical metal Y into another hypothetical metal \(Z\) at \(950^{\circ} \mathrm{C}\); after \(10 \mathrm{~h}\) the concentration at the \(0.5 \mathrm{~mm}\) position (in metal \(Z\) ) is \(2.0 \mathrm{wt} \% \mathrm{Y}\). At what position will the concentration also be \(2.0 \mathrm{wt} \% \mathrm{Y}\) after a \(17.5-\mathrm{h}\) heat treatment again at \(950^{\circ} \mathrm{C}\) ? Assume preexponential and activation energy values of \(4.3 \times 10^{-4} \mathrm{~m}^{2} / \mathrm{s}\) and \(180,000 \mathrm{~J} / \mathrm{mol}\), respectively, for this diffusion system.
Indium atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of In in this silicon material is known to be \(2 \times 10^{20}\) atoms \(/ \mathrm{m}^{3}\). The drive-in diffusion treatment is to be carried out at \(1175^{\circ} \mathrm{C}\) for a period of \(2.0 \mathrm{~h}\), whichgives a junction depth \(x_{j}\) of \(2.35 \mu \mathrm{m}\). Compute the predeposition diffusion time at \(925^{\circ} \mathrm{C}\) if the surface concentration is maintained at a constant level of \(2.5 \times 10^{26}\) atoms \(/ \mathrm{m}^{3}\). For the diffusion of In in Si. values of \(Q_{d}\) and \(D_{0}\) are \(3.63 \mathrm{eV} /\) atom and \(7.85 \times 10^{-5} \mathrm{~m}^{2} / \mathrm{s}\), respectively.
Nitrogen from a gaseous phase is to be diffused into pure iron at \(675^{\circ} \mathrm{C}\). If the surface concentration is maintained at \(0.2 \mathrm{wt} \% \mathrm{~N}\), what will be the concentration \(2 \mathrm{~mm}\) from the surface after \(25 \mathrm{~h}\) ? The diffusion coefficient for nitrogen in iron at \(675^{\circ} \mathrm{C}\) is \(2.8 \times 10^{-11} \mathrm{~m}^{2} / \mathrm{s}\).
A sheet of BCC iron \(2-\mathrm{mm}\) thick was exposed to a carburizing gas atmosphere on one side and a decarburizing atmosphere on the other side at \(675^{\circ} \mathrm{C}\). After reaching steady state, the iron was quickly cooled to room temperature. The carbon concentrations at the two surfaces of the sheet were determined to be \(0.015\) and \(0.0068\) wt \(\%\), respectively. Compute the diffusion coefficient ifthe diffusion flux is \(7.36 \times 10^{-9} \mathrm{~kg} / \mathrm{m}^{2}+\mathrm{s}\). Hint: Use Equation \(4.9\) to convert the concentrations from weight percent to kilograms of carbon per cubic meter of iron.
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