In diamond, carbon’s four full (bonding) s and p spatial states become a band and the four empty(anti bonding) ones becomes a higher energy band. Considering the trend in the band gaps of diamond, silicon, and germanium, explain why it might not be surprising that “covalent” tin behaves as a conducting metallic solid.

Short Answer

Expert verified

The number of electrons are large in the conduction band and it makes the time behaves like metallic solid.

Step by step solution

01

Determine the formulas

Consider the formula for the energy of the electron as:

E=hcλ

Here,λ is the wavelength, h is the plank’s constant, and c is the speed of light.

02

Determine the answer for the question:

Consider the energy gap of the diamond is 5.4 eV and the energy gap of the silicon is 1.1 eV and 0.7 eV in the germanium. In the same way the energy gap of the covalent tin is small and same is at the room temperature. Thus, the number of electrons are large in the conduction band and it makes the time behaves like metallic solid.

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Most popular questions from this chapter

Brass is a metal consisting principally of copper alloyed with a smaller amount of zinc, whose atoms do not alternate in a regular pattern in the crystal lattice but are somewhat randomly scattered about. The resistivity of brass is higher than that of either copper or zinc at room temperature, and it drops much slower as the temperature is lowered. What do these behaviors tell us about electrical conductivity in general?

What factors decrease the conductivity of a conductor as temperature increases? Are these factors also present in a Semiconductor, and if so, how can its conductivity vary with temperature in the opposite sense?

Question: - (a) Compare equation (10-11) evaluated at room temperature for a silicon band gap of 1.1 eV and for a typical donor-state/conduction band gap of 0.05 eV.

(b) Assuming only one impurity atom for every 10³ silicon atoms, do your results suggest that majority carriers, bumped up from donor levels. should outnumber minority carriers created by thermal excitation across the whole 1.1 eV gap? (The calculation ignores the difference in density of states between donor levels and bands, which actually strengthens the argument.)

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