Carry out the integration indicated in equation (10.10)

Short Answer

Expert verified

The integration is obtained and proved.

Step by step solution

01

Determine the formulas

Consider the formulato determine the thermal energy as:

E=knT ….. (1)

Here,kn is Boltzmann constant and the temperature is T.

02

Solve for the integration as:

Solve for the integration as:

Nexcited=EF+12Egap1e(EEF)/knT+1DdE

Considerx=EknT then,dx=dEknT .

Consider xF=EFknTandxgap=EgapknT

Substitute the values in the integration and solve as:

Nexcited=DkBTxF+12xgap1exFxgap+1dx=DkBTxF+12xgapexFxgapexFxgap+1dx

Solve for the derivative of the function as:

dln(1+exfxgap)dx=11+exfxexpx(1)

Solve the integration further as:

Nexcited=DkBTln(1+exFx)xF+12gap=DkBTln(1+eEgap2kBT)

Hence, the integration is obtained and proved.

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Question: Volumes have been written on transistor biasing, but Figure 10.45 gets at the main idea. Suppose that and that the "input" produces its own voltage . The total resistance is in the input loop, which goes clockwise from the emitter through the various components to the base, then back to the emitter through the base-emitter diode. this diode is forward biased with the base at all times 0.7 V higher than the emitter. Suppose also that Vcc = 12 V and that the "out- put" is350KΩ . Now. given that for every 201 electrons entering the emitter, I passes out the base and 200 out the collector, calculate the maximum and minimum in the sinusoidally varying

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(d) Power delivered byVce.

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